1140nm Broadband Semiconductor Optical Amplifier

A high-performance broadband semiconductor optical amplifier designed specifically for the 1140nm near-infrared band. Based on the InAs/GaAs quantum dot material system, the chip end face adopts proprietary anti reflection coating technology (reflectivity<0.001%), which can effectively suppress Fabry Perot oscillation and ensure stable operation of the device in amplification mode. The product provides an ultra wide gain bandwidth of up to 90nm and a maximum small signal gain of 24dB, covering the critical wavelength range of approximately 1095-1185nm. It is widely used in fields such as optical coherence tomography (OCT), swept frequency light sources, fiber optic sensing, and tunable lasers

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1060nm Broadband Semiconductor Optical Amplifier

A high-performance broadband semiconductor optical amplifier designed specifically for the 1060nm near-infrared band. Based on the InAs/GaAs quantum dot material system, the chip end face adopts a tilted waveguide design and proprietary anti reflection coating technology (reflectivity<0.001%), which can effectively suppress Fabry Perot oscillation and ensure stable operation of the device in amplification mode. The product provides an ultra wide gain bandwidth of up to 90nm and a maximum small signal gain of 33dB, covering the key wavelength range of 1010-1080nm. It is widely used in fields such as swept frequency light sources, optical coherence tomography (OCT), fiber optic sensing, and tunable lasers

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1020nm Broadband Semiconductor Optical Amplifier

A high-performance broadband semiconductor optical amplifier designed specifically for the 1020nm near-infrared band. Based on the InAs/GaAs quantum dot material system, the chip end face adopts a tilted waveguide design and an anti reflection coating (reflectivity<0.001%), which can effectively suppress Fabry Perot oscillation and ensure stable operation of the device in amplification mode. The product provides an ultra wide gain bandwidth of up to 110nm and a small signal gain of up to 30dB, covering the key wavelength range of 970-1080nm. It is widely used in fields such as swept frequency light sources, optical coherence tomography (OCT), fiber optic sensing, and tunable lasers

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1000nm Broadband Semiconductor Optical Amplifier

This product is a high-performance broadband semiconductor optical amplifier designed specifically for the 1000nm near-infrared band. Based on the InGaAs/InP material system, a quantum dot active region design is adopted, and an anti reflective coating (reflectivity<0.001%) is deposited on the end face to effectively suppress Fabry Perot oscillation. The device provides a 100nm ultra wide gain bandwidth and a small signal gain of up to 33dB, which can simultaneously amplify multiple wavelength signals within this band. It is widely used in fields such as swept frequency light sources, optical coherence tomography (OCT), fiber optic sensing, and tunable lasers

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910nm Semiconductor Optical Amplifier(Nonlinear)

This is a polarization-insensitive optical amplifier. It utilizes advanced epitaxial wafer growth and optoelectronic packaging technologies to achieve high output saturation power, low noise figure, and high gain over a broad spectral bandwidth.

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840nm Semiconductor Optical Amplifier(Nonlinear)

This is a polarization-insensitive optical amplifier. It uses advanced epitaxial growth and optoelectronic packaging technologies to achieve high output saturation power, low noise figure, and high gain over a broad spectral bandwidth.

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780nm 32dB High-Gain Semiconductor Optical Amplifier

Semiconductor optical amplifiers (SOAs), including booster optical amplifiers (BOAs), are amplifiers that use semiconductors as the gain medium. They have a structure similar to Fabry-Pérot laser diodes but incorporate anti-reflection design elements at their facets. Recent designs feature anti-reflection coatings, tilted waveguides, and window regions, which can reduce facet reflections to below 0.001%. Since this causes the power loss in the cavity to exceed the gain, it prevents the amplifier from functioning as a laser.

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780nm 30dB High-Gain Semiconductor Optical Amplifier

This is a high-performance semiconductor optical amplifier with a central wavelength of 780nm and a typical small-signal gain of 30dB. The device is specifically designed for applications requiring extremely high gain and moderate bandwidth amplification, making it particularly suitable for quantum optics, optical coherence tomography (OCT), and precision measurement systems related to rubidium atomic absorption lines

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1550nm 1.0mW SM VCSEL without Isolator

Vertical-Cavity Surface-Emitting Laser, or VCSEL for short, is a semiconductor laser that emits light vertically from the top surface.Based on GaAs semiconductor material, it differs from both LEDs (Light-Emitting Diodes) and LDs (Laser Diodes).The structure consists of mirrors, an active layer, and a metal contact layer.The two emission mirrors are P-type and N-type Bragg reflectors respectively.The active region is composed of quantum wells.A metal contact layer is formed on the outer surface of the P-type DBR to provide ohmic contact,and a circular aperture is patterned on the P-type DBR for laser output.It features a small far-field divergence angle with a narrow and circular beam;low threshold current and high modulation frequency up to 300 kHz.Wavelength tuning can be achieved by varying the drive current and temperature.Packaged with built-in TEC and PD, it is specifically designed for high-speed optical fiber communications.

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1550nm 1.0mW SM VCSEL with Isolator

Vertical-Cavity Surface-Emitting Laser, or VCSEL for short, is a semiconductor laser that emits light vertically from the top surface.Based on GaAs semiconductor material, it differs from both LEDs (Light-Emitting Diodes) and LDs (Laser Diodes).The structure consists of mirrors, an active layer, and a metal contact layer.The two emission mirrors are P-type and N-type Bragg reflectors respectively.The active region is composed of quantum wells.A metal contact layer is formed on the outer surface of the P-type DBR to provide ohmic contact,and a circular aperture is patterned on the P-type DBR for laser output.It features a small far-field divergence angle with a narrow and circular beam;low threshold current and high modulation frequency up to 300 kHz.Wavelength tuning can be achieved by varying the drive current and temperature.Packaged with built-in TEC and PD, it is specifically designed for high-speed optical fiber communications.

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1403nm MEMS VCSEL Laser Diode

Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor laser based on gallium arsenide (GaAs) material, which emits light vertically from the top surface, fundamentally different from light-emitting diodes (LEDs) and laser diodes (LDs).It consists of reflective mirrors, an active layer, and a metal contact layer. The two emission mirrors are P-type and N-type distributed Bragg reflectors (DBR) respectively, and the active region is composed of quantum wells.A metal contact layer is fabricated on the outer surface of the P-type DBR to form ohmic contact, and a circular aperture is opened on the P-type DBR for laser output.This laser features a small far-field divergence angle with a narrow, circular beam, low threshold current, and high modulation frequency up to 300 kHz.Wavelength tuning can be realized by adjusting the driving current and operating temperature.The package integrates a thermoelectric cooler (TEC) and a photodetector (PD), specially designed for high-speed optical fiber applications.

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894.6nm 0.2mW GaAs SM Low-Power VCSEL Die

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.

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