IdealPhotonics' Ge-biased detector is an infrared photoelectric conversion device based on a germanium semiconductor PN junction. It enhances the response speed and sensitivity in the 800-1800nm ​​wavelength band by applying a reverse bias voltage (10-50V), primarily for near-infrared laser detection and spectral analysis.It features a wide near-infrared response (800-1800nm) and high absorption efficiency, with the response speed boosted to nanosecond levels through bias voltage. However, due to the high dark current (μA level) and temperature sensitivity of germanium material, a compensation circuit is needed to optimize the signal-to-noise ratio.