1000-1200nm Broadband SOA Laser Diode

This product is a high-performance semiconductor optical amplifier designed for the 1000-1200nm near-infrared band. Based on the mature InGaAs/InP material system, quantum dot or strain quantum well active region technology is used, combined with a tapered ridge waveguide structure, to achieve a perfect balance of high gain, wide bandwidth, and low noise. Both ends of the device are coated with anti reflective coatings (reflectivity<0.001%), effectively suppressing Fabry Perot oscillations and ensuring stable operation in amplification mode. It is suitable for fields such as fiber optic communication, sensing, and laser radar

1000-1200nm High gain SOA Laser Diode

This product is a high-performance semiconductor optical amplifier designed for the 1000-1200nm near-infrared band. Based on the mature InGaAs/InP material system, quantum dot or strain quantum well active region technology is used, combined with a tapered ridge waveguide structure, to achieve a perfect balance of high gain, wide bandwidth, and low noise. Both ends of the device are coated with anti reflective coatings (reflectivity<0.001%), effectively suppressing Fabry Perot oscillations and ensuring stable operation in amplification mode. It is suitable for fields such as fiber optic communication, sensing, and laser radar

1000-1200nm BOA Diode

A high-performance broadband boost optical amplifier (BOA) designed for the 1000-1200nm near-infrared band. This series of products adopts proprietary anti reflection coating and tilted waveguide design, which can effectively suppress Fabry Perot resonance and ensure that the device operates in a traveling wave amplification state. The product has high saturation output power, wide operating bandwidth, and high polarization extinction ratio characteristics. It offers two product forms: butterfly package component level and desktop integrated system, which can meet diverse needs from system integration to laboratory plug and play.