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  • 1000nm Broadband Semiconductor Optical Amplifier

    This product is a high-performance broadband semiconductor optical amplifier designed specifically for the 1000nm near-infrared band. Based on the InGaAs/InP material system, a quantum dot active region design is adopted, and an anti reflective coating (reflectivity<0.001%) is deposited on the end face to effectively suppress Fabry Perot oscillation. The device provides a 100nm ultra wide gain bandwidth and a small signal gain of up to 33dB, which can simultaneously amplify multiple wavelength signals within this band. It is widely used in fields such as swept frequency light sources, optical coherence tomography (OCT), fiber optic sensing, and tunable lasers

    Product features:Wide gain bandwidth; high output power; low noise; broad wavelength coverage; compact design

    Part Number:MP-SOA-1000-30db-100-XA

    Application area:Fiber Communication | Spectral Analysis | Optical Testing | National Defense Sensing | Data Center

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    Main parameters
  • Core parameters
  • Operating Wavelength Operating Bandwidth

    1000nm 100nm

  • Dimension Drawing
  • General Parameters

    Detailed Specifications

    Recommended Operating Conditions

    @ CW, housing mounted on a heat sink at room temperature

    Parameter

    Min.

    Typ.

    Max.

    Unit

    Chip Temperature

    20

    25

    30

    °C

    Forward Current

    500*

    600

    mA

    Input Optical Power

    -40

    -25

    10

    dBm

    * The current for maximum gain spectral width may vary by batch.

     

    Gain Characteristics

    @ CW, 25°C, 600 mA, input signal: -25 dBm at maximum gain wavelength

    Parameter

    Min.

    Typ.

    Max.

    Unit

    Small-Signal Gain @ 400 mA

    27

    32

    dB

    Saturated Output Power @ 400 mA (-3 dB)

    14

    17

    dBm

    Average Gain Wavelength

    985

    1000

    1015

    nm

    Gain Bandwidth (FWHM)

    80

    100

    nm

    Gain Spectrum Tilt

    1

    dB

    Noise Figure

    6.5

    dB

    Noise Figure Formula:

    NF=10log 10(2P ase /Ghν)

    [D. Baney et al., Fiber Technology, 6, 122 (2000)]

     

    Amplified Spontaneous Emission (ASE) Characteristics

    @ CW, 25°C,600 mA, no input signal

    Parameter

    Min.

    Typ.

    Max.

    Unit

    Output Power (Per Port)

    20

    mW

    Forward Voltage

    1.7

    2

    V

    Average Wavelength

    1000


    nm

    Bandwidth (FWHM)

    100

    nm

    Spectral Tilt

    1

    dB

    Ground State Peak Position

    1030

    nm

    Excited State Peak Position

    960

    nm

    Ripple (RMS)**

    0.02

    0.2

    dB

    Polarization Extinction Ratio (PER)

    15

    18

    dB

    Polarization

    TE

    ** Measured within 1 nm range near the spectral peak with 20 pm resolution.

     

    Absolute Maximum Ratings

    Parameter

    Min.

    Max.

    Unit

    Output Optical Power

    500

    mW

    Input Optical Power

    20

    dBm

    Forward Current

    800

    mA

    Reverse Voltage

    2

    V

    TEC Current

    3

    A

    TEC Voltage

    4

    V

    Chip Operating Temperature

    10

    40

    °C

    Housing Operating Temperature

    0

    70

    °C

    Storage Temperature

    -40

    85

    °C

    Lead Soldering Temperature (Max. 10 s, max housing temperature 120 °C)

    300

    °C

    Fiber Bend Radius

    3

    cm

     

    Typical performance (for reference only)

    @CW, the case is mounted on room temperature heatsink

    Gain spectra at different currents

    image.png 


    Gain and Output power vs. Input signal

    image.png 


    Gain spectra at different input signals

    image.png 


    Spectra of amplified optical signal

    image.png 


    ASE spectra(no input signal)

    image.png 


    Output power at different input signals

    image.png

     

    Thermistor Specifications

    Fiber Specifications

    Parameter

    Value

    Unit

    Parameter

    PM980

    HI1060

    Unit

    Type

    NTC

    Numerical Aperture, typical

    0.12

    0.14

    Resistance @ 25 °C

    10 ± 0.1

    Cutoff Wavelength

    900 ± 70

    920 ±50

    Nm

    Beta (25–85 °C)

    3435 ± 1%

    K

    Mode Field Diameter (@ 1060 nm)

    6.6 ± 0.3

    6.2 ± 0.3

    μm

    1.2.png 

    Cladding Diameter

    125±1

    125±1

    μm

    Coating Diameter

    245±15

    245±15

    μm

    Loose Tube Diameter (Optional)

    900

    900

    μm

    Connector

    FC/APC (narrow key)

    Connector Alignment aligned with PANDA fiber

    1.3.png 

    Output light is polarized along the slow axis of the PM fiber.

     

     

    Operating InstructionsSafety and Operating Instructions

    The light emitted by this device is invisible and harmful to human eyes. Do not look directly at the fiber connector during operation. Appropriate laser safety goggles must be worn when operating with the connector uncovered.

    Absolute maximum ratings may only be applied to the device for a short time. Long-term operation at or simultaneous exposure to multiple maximum ratings may cause device damage and reduce reliability. Operation beyond the maximum ratings may lead to device failure and safety risks. A matched power supply shall be used to ensure that the maximum forward current is not exceeded.

    Devices mounted on heat spreaders require a proper heat sink. Secure the device to the heat sink with four screws (cross-tightened with an initial torque of 0.075 N·m and a final torque of 0.15 N·m) or clamps. The flatness deviation of the heat sink surface shall be less than 0.05 mm. Indium foil or flexible thermal interface materials are recommended between the device base and the heat sink. Thermal grease is not recommended.

    Avoid optical back-reflection, which may degrade spectral performance and power stability, and cause catastrophic facet damage. The use of an optical isolator is strongly recommended to suppress back-reflection.

    Do not pull the optical fiber. Do not bend the fiber with a bending radius less than 3 cm. Protect the fiber end-face from contamination and damage during installation. After removing the dust cap, clean the fiber end-face in one direction with lens wipes or cotton swabs moistened with isopropyl alcohol or ethanol. Only operate the device with clean fiber connectors.

    ESD Protection – Electrostatic discharge is a major cause of unexpected product failure. Strict ESD protection measures must be taken. Maintain ESD control during installation, including anti-static wristbands, grounded work surfaces and standardized anti-static operation procedures.

    667a775f5d715.png

    Optional Configurations

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  • Product title: 1000nm Broadband Semiconductor Optical Amplifier
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