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Si avalanche photodetector
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Name:Claire Lee
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Product InformationModel Operate
400-1100nm Si Avalanche Balanced Detector 100MHz
MP-ABD-M-S-100-F/S-D/A
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400-1100nm Si Avalanche Balanced Detector 1GHz
MP-ABD-M-S-1000-F/S-A
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400-1100nm Si Avalanche Balanced Detector 200MHz
MP-ABD-M-S-200-F/S-D/A
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400-1100nm Si Avalanche Balanced Detector 300MHz
MP-ABD-M-S-300-F/S-D/A
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400-1100nm Si Avalanche Balanced Detector 400MHz
MP-ABD-M-S-400-F/S-D/A
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400-1100nm Si Avalanche Balanced Detector 500MHz
MP-ABD-M-S500-F/S-D
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400-1100nm Si Avalanche Balanced Detector 2GHz
MP-ABD-M-S-2000-F/S-A
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Silicon Si High Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18
The photosensitive surface diameter of C30902EH high-performance silicon avalanche photodiode (APD) is 0.5 mm, which is suitable for biomedical and analytical applications. This Si APD is designed as a dual diffusion "penetrating" structure, providing high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequencies up to approximately 800 MHz. The detector chip adopts a modified TO-18 package and is sealed behind a flat glass window.
Product InformationModel Operate
Si High-Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18
MP-C30902EH
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