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Si avalanche photodetector

Overview
IdealPhotonics' Si avalanche photodetector is a high-gain detector in the visible light band (400-1100nm) based on the avalanche effect of silicon semiconductors. It achieves an internal gain of 10²-10³ times by triggering carrier avalanche multiplication through reverse bias (100-400V), making it suitable for weak light detection and high-speed photon counting.It features ultra-high gain (10²-10³ times) and sub-nanosecond response in the visible light band (400-1100nm), achieving single-photon detection through precise bias control (near breakdown voltage). However, it requires deep cooling to suppress dark counting noise (<100Hz), making it a key sensor for quantum communication and lidar.

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400-1100nm silicon Si avalanche balanced detector BAPD series

Product InformationModel WavelengthBandwidthResponsivity Operate

400-1100nm Si Avalanche Balanced Detector 100MHz MP-ABD-M-S-100-F/S-D/A 400-1100nm100MHz25A/W@850nm Add to Cart

400-1100nm Si Avalanche Balanced Detector 1GHz MP-ABD-M-S-1000-F/S-A 400-1100nm1GHz25A/W@850nm Add to Cart

400-1100nm Si Avalanche Balanced Detector 200MHz MP-ABD-M-S-200-F/S-D/A 400-1100nm200MHz25A/W@850nm Add to Cart

400-1100nm Si Avalanche Balanced Detector 300MHz MP-ABD-M-S-300-F/S-D/A 400-1100nm300MHz25A/W@850nm Add to Cart

400-1100nm Si Avalanche Balanced Detector 400MHz MP-ABD-M-S-400-F/S-D/A 400-1100nm400MHz25A/W@850nm Add to Cart

400-1100nm Si Avalanche Balanced Detector 500MHz MP-ABD-M-S500-F/S-D 400-1100nm500MHz25A/W@850nm Add to Cart

400-1100nm Si Avalanche Balanced Detector 2GHz MP-ABD-M-S-2000-F/S-A 400-1100nm2GHz25A/W@850nm Add to Cart

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Silicon Si High Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18

The photosensitive surface diameter of C30902EH high-performance silicon avalanche photodiode (APD) is 0.5 mm, which is suitable for biomedical and analytical applications. This Si APD is designed as a dual diffusion "penetrating" structure, providing high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequencies up to approximately 800 MHz. The detector chip adopts a modified TO-18 package and is sealed behind a flat glass window.

Product InformationModel WavelengthEffective DiameterPackage Operate

Si High-Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18 MP-C30902EH 400-1100nm0.5mmTO-18 Add to Cart

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  • 10+ 10 Years of Experience
  • 50 50 + Countries Bussiness
  • 10000 10k + Diodes sold worldwide
  • 30 30+ Invention patent
  • 10 10+ Advanced Optical Solutions

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