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750-830nm VCSEL laser diode

Overview
IdealPhotonics' 750-830nm VCSEL diodes are based on the mature GaAs/AlGaAs material system, offering both excellent performance and reliability. They have key application value in communications, sensing, and other fields, and are continuously being developed towards higher power and higher data rates.Based on the highly mature GaAs/AlGaAs material system, they combine high efficiency, high reliability, and low cost. They hold a dominant position in the communications and sensing fields and are being developed towards higher power and higher data rates.

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VCSEL single-mode vertical cavity surface emitting laser 760nm 0.3mW

The 760nm single-mode vertical cavity surface emitting laser (VCSEL) has the advantages of high output power, narrow linewidth, and good consistency. With a tuning range of 2nm, it is designed specifically for tunable semiconductor laser absorption spectroscopy (TDLAS) applications and has built-in anti-static (ESD) protection TO39 packaging

Product InformationModel Emission wavelengthOutput power Operate

760nm single mode vertical cavity surface emitting laser VCSEL TO39 P760/01_2 MP-VCS-760-0.3-TO39-SM-TEC 760nm0.3mW Add to Cart

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750-830nm VCSEL Laser Diode TO package

The  vertical-cavity surface-emitting laser is a GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process. Adopting TO39 metal hermetic package, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD).

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795nm VCSEL GaAs Chip

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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  • 10+ 10 Years of Experience
  • 50 50 + Countries Bussiness
  • 10000 10k + Diodes sold worldwide
  • 30 30+ Invention patent
  • 10 10+ Advanced Optical Solutions