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750-830nm VCSEL laser diode
Grace Guly
Phone:+86 13003168941
E-mail:grace@idealphtonics.com
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VCSEL single-mode vertical cavity surface emitting laser 760nm 0.3mW
The 760nm single-mode vertical cavity surface emitting laser (VCSEL) has the advantages of high output power, narrow linewidth, and good consistency. With a tuning range of 2nm, it is designed specifically for tunable semiconductor laser absorption spectroscopy (TDLAS) applications and has built-in anti-static (ESD) protection TO39 packaging
Product InformationModel Emission wavelengthOutput power Operate
760nm single mode vertical cavity surface emitting laser VCSEL TO39 P760/01_2
MP-VCS-760-0.3-TO39-SM-TEC
760nm0.3mW Add to Cart
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750-830nm VCSEL Laser Diode TO package
The vertical-cavity surface-emitting laser is a GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process. Adopting TO39 metal hermetic package, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD).
Product InformationModel Center Wavelength Operate
760nm 0.5mW SM VCSEL laser diode with TEC
MP-VCS-760-0.5-A81-TO39-SM-TEC
760nm Add to Cart
760nm 0.5mW SM VCSEL laser diode without TEC
MP-VCS-760-0.5-A82-TO46-SM
760nm Add to Cart
763nm 0.5mW SM VCSEL laser diode with TEC
MP-VCS-763-0.5-A82-TO39-SM-TEC
763nm Add to Cart
763nm 0.5mW SM VCSEL laser diode without TEC
MP-VCS-763-0.5-A82-TO46-SM
763nm Add to Cart
794.7nm 0.5mW SM VCSEL laser diode with TEC
MP-VCS-794.7-0.5-A81-TO5-SM-TEC
794.7nm Add to Cart
760nm 1mW TO8 SM VCSEL laser diode
MP-VCS-760-1-TO8-SM-TEC
760nm Add to Cart
763nm 1mW TO8 SM VCSEL laser diode
MP-VCS-763-1-TO8-SM-TEC
763nm Add to Cart
795nm 0.1mW TO46 VCSEL Laser Diode with TEC
MP-VCS-795-0.1-TO46-TEC
795nm Add to Cart
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A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm
Product InformationModel Center Wavelength Operate
795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 1)
MP-VCS-795-0.13-DIE1-SM
795nm Add to Cart
795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 2)
MP-VCS-795-0.13-DIE2-SM
795nm Add to Cart
795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 3)
MP-VCS-795-0.13-DIE3-SM
795nm Add to Cart
795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 4)
MP-VCS-795-0.13-DIE4-SM
795nm Add to Cart
795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 5)
MP-VCS-795-0.13-DIE5-SM
795nm Add to Cart
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