Emission wavelength

λR

Detail precision Wavelength Choose From Below Absorption Line

Threshold current

ITH

0.5

mA

Output power

Popt

0.25

0.5

0.7

mW

Threshold voltage

UTH

1.8

V

Drive current

IOP

2

mA

Popt = 0.3 mW

Laser voltage

UOP

2

V

Popt = 0.3 mW

Electro-optical conversion efficiency

ηWP

12

%

Popt = 0.3 mW

Slope efficiency

ηS

0.3

W/A

Differential series resistors

RS

250

Ω

Popt = 0.3 mW

3dB bandwidth

V3dB

0.10

GHz

Popt = 0.3 mW Due to ESD protection diode

Relative intensity noise

RIN

-130

-120

dB/Hz

Popt = 0.3 mW @ 1 GHz

Current tuning wavelength range

0.6

nm/mA

Temperature-tuned wavelength range

0.06

nm/K

Thermal resistance (VCSEL chip).

Rthermal

3

5

K/mW

Edge mold suppression ratio

25

dB

I = 2 mA

Beam divergence angle

θ

10

25

°

Popt = 0.3 mW, full width 1/e2

Spectral line width

100

MHz

Popt = 0.3 mW

thermoelectric chiller current

mA

-150(Heating)

+300 (Cooling)

Proper Heart Sink Required

NTC thermistor resistance value

KΩ

9.5

10.0

10.5

T=25°C @10 KΩ

NTC Thermistor Resistance Value (Formula)

KΩ

10/exp{3892-(1/289K-I/TOP)}

Typical emission wavelength (TOP=20°C, Iop=2mA).

The final wavelength is tuned by TEC and current

760nm absorption line

Minimum

Maximum

Grade A

759.8

760.8

760.3

761.3

Grade C

759.0

760.1

760.1

761.3

763nm absorption line

Grade A

762.5

763.5

763.0

764.0

Grade C

761.9

764.9

763.0

764.8

Storage temperature

°C

-40

25

125

Chip temperature

°C

+10

25

40

Operating current

mA

0

2

3

Forward voltage

V

0.8

1.2

1.8

Thermoelectric chiller (TEC) current

A

-150

-

+300

Welding temperature*

V

100

130

270

Power consumption

V

-

-

5