IdealPhotonics' InAsSb photodiode, a broadband infrared detector based on group III-V narrow-bandgap semiconductors, achieves mid-to-long-wave infrared detection in the 3-12μm range by adjusting the arsenic-antimony composition ratio. It enables high-sensitivity gas analysis and thermal imaging without cooling (room temperature) or with minimal cooling (thermoelectric cooling).The wide-range mid-to-long-wave infrared coverage (3-12μm) and room-temperature operability, combined with a balance between high detectivity (>10¹⁰ Jones) and low dark current achieved through bandgap engineering, make it a key sensor for uncooled infrared systems.