IdealPhotonics' GaAs (Gallium Arsenide) bias detector is an optoelectronic device that enhances near-infrared (800-1700nm) performance by applying a reverse bias voltage (typically 5-50V). Based on the photovoltaic effect of III-V group semiconductor materials, it converts optical signals into electrical signals. Its design accelerates carrier transit through a strong electric field, significantly improving response speed and quantum efficiency, making it particularly suitable for applications requiring rapid photoelectric conversion, such as fiber optic communication (1310nm band) and pulsed laser ranging.High-speed response (nanosecond level) and adjustable gain in the near-infrared (800-1700nm) band are achieved through a controllable reverse bias voltage (5-50V), while also possessing high quantum efficiency (>70%@1310nm) and TO packaging compatibility. However, temperature control is required to suppress dark current and maintain the signal-to-noise ratio.