Idealphotonics' has launched an indium gallium arsenide avalanche photodetector, a high-sensitivity near-infrared (900-1700nm) detector based on an InGaAs/InP heterojunction. It achieves a 10²-10³ times internal gain through the avalanche multiplication effect, combining GHz bandwidth and single-photon-level detection capability in the 1.55μm communication band. Temperature control (-30℃) is required to optimize the signal-to-noise ratio.The near-infrared band (900-1700nm) offers ultra-high sensitivity (single-photon level) and controllable avalanche gain (10²-10³ times). By optimizing the heterojunction structure (such as SAGCM), a balance between GHz bandwidth and low noise is achieved, making it a core sensor for fiber optic communication and quantum detection.

IdealPhotonics' Si avalanche photodetector is a high-gain detector in the visible light band (400-1100nm) based on the avalanche effect of silicon semiconductors. It achieves an internal gain of 10²-10³ times by triggering carrier avalanche multiplication through reverse bias (100-400V), making it suitable for weak light detection and high-speed photon counting.It features ultra-high gain (10²-10³ times) and sub-nanosecond response in the visible light band (400-1100nm), achieving single-photon detection through precise bias control (near breakdown voltage). However, it requires deep cooling to suppress dark counting noise (<100Hz), making it a key sensor for quantum communication and lidar.