IdealPhotonics' InAsSb indium arsenide antimony bias detector is a broadband infrared detector based on group III-V narrow bandgap semiconductors. By adjusting the arsenic-antimony composition ratio, it covers the 3-12μm mid-to-long-wave infrared band, achieving high detectivity even with micro-cooling (-40℃) or room temperature. It is primarily used for industrial gas analysis and infrared thermal imaging.The 3-12μm broadband mid-to-long-wave infrared detection and room-temperature operability, combined with high detectivity (>10¹⁰ Jones) in the 8-14μm atmospheric window achieved through compositional control, offer advantages in cooling cost (thermoelectric cooling is sufficient) and μs-level response speed, rapidly replacing traditional MCT detectors in industrial detection fields.