IdealPhotonics' Ge-based amplified detector utilizes the narrow bandgap characteristics of germanium in its near-infrared (800-1800nm) detectors, offering a cost-effective alternative to InGaAs in some applications. Its structure is typically a PN junction or PIN diode, suitable for low-cost industrial sensing and laboratory optical power monitoring.High absorption coefficient and low cost are advantages, but dark current (μA level) and temperature sensitivity require additional compensation circuitry.