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InGaAs photodiode

Overview

IdealPhotonics' InGaAs photodiode is a broadband detection device based on group III-V compound semiconductors. It achieves high-sensitivity photoelectric conversion in the 900-2600nm wavelength range (near-infrared to short-wave infrared) by adjusting the InGaAs composition ratio, and is particularly adept at ultra-low noise detection in the 1.55μm fiber optic communication band.It features a wide infrared coverage (900-2600nm) and ultra-high sensitivity (detectivity > 10¹² Jones). Through tunable bandgap design and avalanche multiplication effect, it achieves quantum-limited detection of weak light signals, but relies on thermoelectric cooling to maintain pA-level dark current.

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InGaAs unit detector 1.7um SWIR two-stage TEC TO package

Product InformationModel Working WavelengthActive AreaPackage Operate

950-1650nm InGaAs Detector with Dual TEC, Photodiode Φ1000μm MPD-CPD-B-I-9V1-2 950-1650nm1000umTO Add to Cart

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900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength

Product InformationModel Spectral Response RangeActive Diameter Operate

900-1800nm InGaAs Large Active Area PIN Photodiode MP-IRD-IGS-10 900-1700nm10mm Add to Cart

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900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package

The GESTIN-2TE-TO8 series unit InGaAs detector is mainly composed of P-I-N structure InGaAs photosensitive chip, transition electrode plate, temperature sensor, and two-stage thermoelectric cooler (2TE), and adopts TO packaging form. This user manual only introduces the product series.

Product InformationModel Working wavelength photosensitive surface diameter packaging Operate

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ0.3mm MP-CPD-B-I-9U0.3-2 900-2700nm0.3mmTO-8 Add to Cart

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ0.5mm MP-CPD-B-I-9U0.5-2 900-2700nm0.5mmTO-8 Add to Cart

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ2mm MP-CPD-B-I-9U2-2 900-2700nm2mmTO-8 Add to Cart

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ3mm MP-CPD-B-I-9U3-2 900-2700nm3mmTO-8 Add to Cart

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800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm

Product InformationModel WavelengthActive AreaResponsivity Operate

800-2600nm High-Speed InGaAs PIN Photodiode with 1.5mm TO39 Sealed Dome Lens MP-CPD-B-I-8M1.5 800-2600nm1.5mm1.24A/W@2400nm Add to Cart

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Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

Product InformationModel WavelengthResponsivityEffective Area Operate

600-1750nm InGaAs quadrant photodiode MP-QPD-B-I-W3 600-1750nm0.55A/W@1330nm3mm Add to Cart

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1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

Application areas: Spectral detection and analysis, gas analysis, water content analysis, etc. Product features: positive irradiation structure, high sensitivity, fast response time, TO46 packaging

Product InformationModel Active AreaBandPeak Wavelength Operate

1.0~2.6 um extended InGaAs photodiode MP-CPD-B-I-X0.3 Φ0.3mm1.0-2.6um2.2um Add to Cart

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Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

Product InformationModel Wavelength RangeActive Area Operate

900-2700nm Large photosensitive surface InGaAs Indium Gallium Arsenide Photodiode φ2mm MP-CPD-B-I-4U2 900-2700nm2mm Add to Cart

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900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

Product InformationModel WavelengthResponsivity Operate

900-1700nm InGaAs Geiger Mode Avalanche Photodiode Uncooled MP-GMD-B-I-9N 0.9-1.7um0.85A/W@1550nm Add to Cart

900-1700nm InGaAs Geiger-mode avalanche photodiode with built-in TEC cooling MP-GMD-B-I-9N-1 0.9-1.7um0.85A/W@1550nm Add to Cart

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1000–1600nm InGaAs Photodiode, 30GHz

The InGaAs photodiode is based on a unique package featuring high-speed, fast rise-and-fall response. The component integrates a fiber with a high-sensitivity photodiode for signal detection. The output is analog (without a TIAC). Our design minimizes component assembly costs and module footprint while improving stability over wide temperature and wavelength ranges. Three analog response speeds of 10 GHz, 20 GHz, and 32 GHz are available. The detector can also be ordered with integrated bias circuitry and an SMA RF connector.

Product InformationModel Wavelength Range3dB BandwidthMaximum Input Optical Power Operate

1000–1600nm InGaAs Photodiode, 30GHz MP-CPD-B-I-30G 1000 – 1600 nm30 GHz10 mW Add to Cart

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  • 10+ 10 Years of Experience
  • 50 50 + Countries Bussiness
  • 10000 10k + Diodes sold worldwide
  • 30 30+ Invention patent
  • 10 10+ Advanced Optical Solutions

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