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1000–1600nm InGaAs Photodiode, 30GHz
The InGaAs photodiode is based on a unique package featuring high-speed, fast rise-and-fall response. The component integrates a fiber with a high-sensitivity photodiode for signal detection. The output is analog (without a TIAC). Our design minimizes component assembly costs and module footprint while improving stability over wide temperature and wavelength ranges. Three analog response speeds of 10 GHz, 20 GHz, and 32 GHz are available. The detector can also be ordered with integrated bias circuitry and an SMA RF connector.
Product features:Low cost;Large bandwidth;Nanosecond fast response;High reliability
Part Number:MP-CPD-B-I-30G
Application area:Channel monitoring | Power monitoring in optical interface modules | Gain monitoring for amplifier instruments
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Wavelength Range 3dB Bandwidth Maximum Input Optical Power
1000 – 1600 nm 30 GHz 10 mW

Parameter | Min. | Typ. | Max. | Unit |
Central Wavelength | 1000 | – | 1600 | nm |
Responsivity | 0.7 | 0.9 | – | A/W |
Input Power | -30 | – | 10 | mW |
Saturation Power | – | – | 10 | dBm |
Polarization Extinction Ratio | 18 | 23 | – | dB |
Dark Current @ 23°C | – | 0.05 | 0.05 | nA |
Capacitance | – | 60 | 70 | fF |
Reverse Voltage | – | – | 10 | V |
Reverse Breakdown Voltage | – | – | 20 | V |
Response Frequency | 10 | – | 40 | GHz |
Forward Current | – | – | 10 | mA |
Reverse Current | – | – | 5 | mA |
ESD Susceptibility (HBM) | – | – | 100 | V |
Soldering Temperature (60 s) | – | – | 200 | °C |
Operating Temperature | -40 | – | 75 | °C |
Storage Temperature | -40 | – | 85 | °C |
Reliability | Complies with Telcordia 1209 and 1221 | |||
Pin Assignments
Pin Number | Function |
1 | PD Anode (+) |
2 | No Connection (NC) |
3 | No Connection (NC) |
4 | Photodiode Cathode (-) |
5 | Case Ground (GND) |
Spectral Response
Optical Power Handling vs. Wavelength

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