1000–1600nm InGaAs Photodiode, 30GHz

1000–1600nm InGaAs Photodiode, 30GHz

InGaAs unit detector 1.7um SWIR two-stage TEC TO package
900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength
900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package
800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm
Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm
1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm
Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)
900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

Overview

1000–1600nm InGaAs Photodiode, 30GHz

The InGaAs photodiode is based on a unique package featuring high-speed, fast rise-and-fall response. The component integrates a fiber with a high-sensitivity photodiode for signal detection. The output is analog (without a TIAC). Our design minimizes component assembly costs and module footprint while improving stability over wide temperature and wavelength ranges. Three analog response speeds of 10 GHz, 20 GHz, and 32 GHz are available. The detector can also be ordered with integrated bias circuitry and an SMA RF connector.

Grace Guly

Phone：+86 13003168941

E-mail：grace@idealphtonics.com

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Product InformationModel Wavelength Range3dB BandwidthMaximum Input Optical Power Operate

1000–1600nm InGaAs Photodiode, 30GHz MP-CPD-B-I-30G 1000 – 1600 nm30 GHz10 mW Add to Cart

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