1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

InGaAs unit detector 1.7um SWIR two-stage TEC TO package
900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength
900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package
800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm
Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm
Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)
900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

Overview

1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

Application areas: Spectral detection and analysis, gas analysis, water content analysis, etc. Product features: positive irradiation structure, high sensitivity, fast response time, TO46 packaging

Grace Guly

Phone：+86 13003168941

E-mail：grace@idealphtonics.com

WeChat WhatsApp

Product InformationModel Active AreaBandPeak Wavelength Operate

1.0~2.6 um extended InGaAs photodiode MP-CPD-B-I-X0.3 Φ0.3mm1.0-2.6um2.2um Add to Cart

0 Selected Items Add to Cart