Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

info@idealphotonics.com

Home/ Products/ PhotoDetectors/ Photodiode/ InGaAs photodiode/ Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

InGaAs unit detector 1.7um SWIR two-stage TEC TO package
900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength
900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package
800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm
1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm
Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)
900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

Overview

Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

Account Manager

Name：Claire Lee

Phone：+86 13032176908

Email：claire@idealphotonics.com

WeChat：

Product InformationModel WavelengthResponsivityEffective Area Operate

600-1750nm InGaAs quadrant photodiode MP-QPD-B-I-W3 600-1750nm0.55A/W@1330nm3mm Add to Cart

0 Selected Items Add to Cart

10+ 10 Years of Experience
50 50 + Countries Bussiness
10000 10k + Diodes sold worldwide
30 30+ Invention patent
10 10+ Advanced Optical Solutions

⇪