Si photodiode

Si photodiode

Overview

IdealPhotonics' Si photodiode is a semiconductor device based on the photovoltaic effect of a PN junction. It generates current by absorbing photons in the 400-1100nm wavelength range using silicon material, achieving a linear conversion between optical and electrical signals.High sensitivity, wide spectral response (400-1100nm), and fast photoelectric conversion are achieved through the low-noise characteristics of the silicon PN junction, enabling pW-level light intensity detection while maintaining nanosecond-level response speed and linear output.

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Silicon Si avalanche photodiode 400-1100nm

Si silicon avalanche photodiode, with a spectral response range from visible light to near-infrared, peak response wavelength of 905nm. It has a large sensing surface, high-speed response, high gain, and low noise.

Product InformationModel Spectral Response RangeActive areaPackage Method Operate

Silicon Si avalanche photodiode 905nm (Active area 0.23mm LCC3) MP-APD-B-S-905-0.23-L 400-1100nm0.23mmLCC3 Add to Cart

Silicon Si avalanche photodiode 905nm (Active area 0.5mm LCC3) MP-APD-B-S-905-0.5-L 400-1100nm0.5mmLCC3 Add to Cart

Silicon Si avalanche photodiode 905nm (Active area 0.5mm TO46) MP-APD-B-S-905-0.5-T 400-1100nm0.5mmTO46 Add to Cart

Silicon Si avalanche photodiode 905nm (Active area 0.8mm TO46) MP-APD-B-S-905-0.8-T 400-1100nm0.8mmTO46 Add to Cart

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