IdealPhotonics' Si photodiode is a semiconductor device based on the photovoltaic effect of a PN junction. It generates current by absorbing photons in the 400-1100nm wavelength range using silicon material, achieving a linear conversion between optical and electrical signals.High sensitivity, wide spectral response (400-1100nm), and fast photoelectric conversion are achieved through the low-noise characteristics of the silicon PN junction, enabling pW-level light intensity detection while maintaining nanosecond-level response speed and linear output.

IdealPhotonics' InGaAs photodiode is a broadband detection device based on group III-V compound semiconductors. It achieves high-sensitivity photoelectric conversion in the 900-2600nm wavelength range (near-infrared to short-wave infrared) by adjusting the InGaAs composition ratio, and is particularly adept at ultra-low noise detection in the 1.55μm fiber optic communication band.It features a wide infrared coverage (900-2600nm) and ultra-high sensitivity (detectivity > 10¹² Jones). Through tunable bandgap design and avalanche multiplication effect, it achieves quantum-limited detection of weak light signals, but relies on thermoelectric cooling to maintain pA-level dark current.

IdealPhotonics' Ge-based photodiode is an optoelectronic device utilizing germanium semiconductor material. It leverages germanium's narrow bandgap characteristics to achieve optical signal detection and electrical signal conversion in the 800-1800nm ​​near-infrared band, making it particularly suitable for low-cost infrared sensing applications.Its wide-spectrum near-infrared response (800-1800nm) and high absorption efficiency, combined with the intrinsic absorption characteristics of germanium, enable low-cost infrared detection. However, limitations due to μA-level dark current and temperature sensitivity necessitate the use of a compensation circuit.