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Ge photodiode
IdealPhotonics' Ge-based photodiode is an optoelectronic device utilizing germanium semiconductor material. It leverages germanium's narrow bandgap characteristics to achieve optical signal detection and electrical signal conversion in the 800-1800nm near-infrared band, making it particularly suitable for low-cost infrared sensing applications.Its wide-spectrum near-infrared response (800-1800nm) and high absorption efficiency, combined with the intrinsic absorption characteristics of germanium, enable low-cost infrared detection. However, limitations due to μA-level dark current and temperature sensitivity necessitate the use of a compensation circuit.
Grace Guly
Phone:+86 13003168941
E-mail:grace@idealphtonics.com
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Product InformationModel WavelengthResponsivityActive Area Operate
10mm Ge large light sensitive surface detector (BNC interface output)
MP-CPD-B-G-8J10-BNC
800-1700nm10mABNC Add to Cart
Ge Germanium Ultra-large active area PIN photodiode (800-1800nm diameter 10mm)
MP-CPD-B-G-8K10
800-1800nm0.85A/W10mm Add to Cart
Ge Germanium Large active area PIN photodiode (800-1800nm diameter 5mm)
MP-CPD-B-G-8K5
800-1800nm0.85A/W5mm Add to Cart
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