Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

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Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

InGaAs unit detector 1.7um SWIR two-stage TEC TO package
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800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm
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1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm
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Overview

Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

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Product InformationModel Wavelength RangeActive Area Operate

900-2700nm Large photosensitive surface InGaAs Indium Gallium Arsenide Photodiode φ2mm MP-CPD-B-I-4U2 900-2700nm2mm Add to Cart

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