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    • 763nm 0.5mW SM VCSEL laser diode without TEC

    The 763 nm vertical-cavity surface-emitting laser (VCSEL) is a vertically light-emitting laser fabricated from GaAsP/AlGaAs single-mode semiconductor laser chip grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process.Packaged in TO46 housing, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD). Specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications, its narrow linewidth characteristic makes it an ideal choice for oxygen analyzers without TEC, combining excellent performance and low cost, suitable for the manufacturing of analytical instruments related to oxygen detection.

    Product features：100 MHz spectral bandwidth；Wavelength tunability；TO-46 window with anti-reflection (AR) coating；Optimized for oxygen sensing applications

    Part Number：MP-VCS-763-0.5-A82-TO46-SM

    Application area：TDLAS Oxygen Sensing | Fourier Transform Infrared Spectroscopy (FTIR)

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    Main parameters
  • Core parameters

  • Center Wavelength

    763nm

  • Dimension Drawing
    • General Parameters

    Detailed parameters

    Laser specifications

    Condition: Die back of the chip temperature (TOp) of 20°C and operating current (Iₒp) of 2.0mA unless otherwise stated (TOp is the back of the chip temperature, controlled by a thermoelectric cooler (TEC)).

    Parameters

    symbol

    Minimum

    Typical values

    Maximum

    unit

    Note:

    Emission wavelength

    λR

    763nm

    Threshold current

    ITH


    0.5


    mA


    Output power

    Popt

    0.25

    0.5

    0.75

    mW


    Threshold voltage

    UTH


    1.8


    V


    Drive current

    IOP



    2

    mA

    Popt = 0.3 mW

    Laser voltage

    UOP


    2


    V

    Popt = 0.3 mW

    Electro-optical conversion efficiency

    ηWP


    12


    %

    Popt = 0.3 mW

    Slope efficiency

    ηS


    0.3


    W/A


    Differential series resistors

    RS


    150


    Ω

    Popt = 0.3 mW

    3dB bandwidth

    v3dB

    0.10



    GHz

    Popt = 0.3 mW, Due to ESD protection diode

    Relative intensity noise

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Current tuning wavelength range



    0.6


    nm/mA


    Thermal resistance (VCSEL chip).

    Rthermal

    3


    5

    K/mW


    Edge mold suppression ratio


    25



    dB

    I = 2 mA

    Beam divergence angle

    θ

    10


    25

    °

    Popt = 0.3 mW, full width 1/e2

    Spectral line width



    100


    MHz

    Popt = 0.3 mW

     

    spectrum

    1.1.png 


    Optical Power - Current curve (at 25°C).

    1.2.png 

    To ensure the performance of this vertical cavity surface emitting laser (VCSEL), we strongly recommend that its maximum operating current does not exceed 2mA


    Oxygen absorption line

    1.3.png 


    Dimensions and pin definitions

    1.4.png 

     

    Absolute maximum rating

    project

    unit

    Minimum

    Typical values

    Maximum

    Storage temperature

    °C

    -40

    25

    125

    Chip temperature

    °C

    +10

    25

    40

    Operating current

    mA

    0

    2

    2.5

    Forward voltage

    V

    0.8

    1.2

    1.8

    Welding temperature*

    °C

    100

    130

    270

    Dissipate power

    mw

    -

    -

    5

     

    Ordering information

    MP-VCS-□□□□-☆-A8▽-TO39-XX

    □□□□: Wavelength

    0760: 760nm

    *****

    1653.7: 1653.7nm

    ☆: TEC

    0: Without TEC

    1: With TEC

    ▽: Wavelength Tolerance

    1: ±0.5nm

    2: ±1.5nm


    Optional Configurations

    --

    Downloads

    763nm 0.5mW SM VCSEL laser diode without TEC.pdf

    Request for Quotation

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  • Product title: 763nm 0.5mW SM VCSEL laser diode without TEC
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