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    • 760nm 0.5mW SM VCSEL laser diode without TEC

    The 760 nm vertical-cavity surface-emitting laser (VCSEL) is a vertically light-emitting single-mode semiconductor laser. Its chip is fabricated from GaAsP/AlGaAs material grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process, and packaged in TO46 hermetic housing.It realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and monitoring Photodetector (PD), and is specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications. With outstanding narrow linewidth performance, it serves as a cost-effective ideal solution for oxygen concentration analysis without auxiliary cooling modules.

    Product features：100 MHz spectral bandwidth；Excellent wavelength tunability；TO46 window with Anti-Reflection (AR) coating；Optimized design for oxygen sensing scenarios

    Part Number：MP-VCS-760-0.5-A82-TO46-SM

    Application area：TDLAS Oxygen Sensing | Fourier Transform Infrared Spectroscopy (FTIR)

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    Main parameters
  • Core parameters

  • Center Wavelength

    760nm

  • Dimension Drawing
    • General Parameters

    Detailed parameters

    Laser specifications

    Condition: TOP=20°C, IOP=2.0mA unless otherwise stated (TO P = Chip backside temperature, controlled by semiconductor cooler (TEC)).

    Parameters

    conditions

    Minimum

    Typical values

    Maximum

    unit

    Note:

    Emission wavelength

    λR

    760nm

    Threshold current

    ITH


    0.5


    mA


    Output power

    Popt

    0.25

    0.5

    0.75

    mW


    Threshold voltage

    UTH


    1.8


    V


    Drive current

    IOP



    2

    mA

    Popt = 0.3 mW

    Laser voltage

    UOP


    2


    V

    Popt = 0.3 mW

    Electro-optical conversion efficiency

    ηWP


    12


    %

    Popt = 0.3 mW

    Slope efficiency

    ηS


    0.3


    W/A


    Differential series resistors

    RS


    150


    Ω

    Popt = 0.3 mW

    3dB bandwidth

    v3dB

    0.10



    GHz

    Popt = 0.3 mW, due to the presence of electrostatic protection diodes

    Relative intensity noise

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Current tuning wavelength



    0.6


    nm/mA


    Thermistor (VCSEL chip).

    Rthermal

    3


    5

    K/mW


    Edge mold suppression ratio


    25



    dB

    I = 2 mA

    Beam divergence angle

    θ

    10


    25

    °

    Popt = 0.3 mW, full width 1/e2

    Spectral width



    100


    MHz

    Popt = 0.3 mW

     

    Spectral diagram

    760.jpg

     

    L-I curve (T@25°C)

     1.2.png

    We strongly recommend keeping the maximum current within 2mA to ensure stable performance of this vertical cavity surface emitting laser (VCSEL).


    Oxygen absorption line

    5afade033140b.png

     

    Dimensions and pin definitions (in mm).

    1.3.png

     

     

    Absolute maximum rating (T=25°C, IF=2mA).

    Item

    unit

    Minimum

    Typical values

    Maximum

    Storage temperature

    C

    -40

    25

    125

    Chip temperature

    °C

    10

    25

    40

    Operating current

    mA

    0

    2

    2.5

    Forward voltage

    V

    0.8

    1.2

    1.8

    Welding temperature*

    °C

    100

    130

    270

    Electrical power dissipation

    mw

    -

    -

    5

     

    Ordering information

    MP-VCS-□□□□-☆-A8▽-TO39-XX

    □□□□: Wavelength

    0760: 760nm

    *****

    1653.7: 1653.7nm

    ☆: TEC

    0: Without TEC

    1: With TEC

    ▽: Wavelength Tolerance

    1: ±0.5nm

    2: ±1.5nm


    Optional Configurations

    --

    Downloads

    760nm 0.5mW SM VCSEL laser diode without TEC.pdf

    Request for Quotation

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  • Product title: 760nm 0.5mW SM VCSEL laser diode without TEC
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