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    • 794.7nm 0.5mW SM VCSEL laser diode with TEC

    The 794.7 nm vertical-cavity surface-emitting laser is a vertically light-emitting GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process, with TO5 package.It achieves wavelength tuning by adjusting laser drive current and operating temperature. Integrated with built-in Thermoelectric Cooler (TEC) and monitoring Photodetector (PD), this laser is specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications. Featuring ultra-narrow linewidth and wide tuning range enabled by TEC temperature control, it is a cost-effective option for rubidium atomic spectrum D1 transition research.

    Product features：Vertical-cavity surface-emitting laser architecture；Built-in Thermoelectric Cooler (TEC) and thermistor；Integrated electrostatic discharge protection function；Ultra-narrow spectral linewidth 2 nm continuous wavelength tuning range supported by TEC temperature control Optimized for rubidium atomic D1 transition research scenarios

    Part Number：MP-VCS-794.7-0.5-A81-TO5-SM-TEC

    Application area：Tunable Diode Laser Absorption Spectroscopy (TDLAS) | Rubidium Atomic Spectroscopy | Optical Clock (Rubidium Atomic Clock)

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    Main parameters
  • Core parameters

  • Center Wavelength

    794.7nm

  • Dimension Drawing
    • General Parameters

    Detailed parameters

    Laser specifications

    Condition: Back-of-chip temperature (TO P) of 20°C and operating current (IO P) of 2.0mA unless otherwise noted

    (TO P = Chip Back Temperature, controlled by Semiconductor Refrigerator (TEC)).

    Parameters

    symbol

    Minimum

    Typical values

    Maximum

    unit

    Note:

    Emission wavelength

    λR

    794.7

    Threshold current

    ITH


    0.5


    mA


    Output power

    Popt

    0.25



    mW


    Threshold voltage

    UTH


    1.8


    V


    Drive current

    IOP



    2

    mA

    Popt = 0.3 mW

    Laser voltage

    UOP


    2


    V

    Popt = 0.3 mW

    Electro-optical conversion efficiency

    ηWP


    12


    %

    Popt = 0.3 mW

    Slope efficiency

    ηS


    0.3


    W/A


    Differential series resistors

    RS


    250


    Ω

    Popt = 0.3 mW

    3dB bandwidth

    V3dB

    0.10



    GHz

    Popt = 0.3 mW Due to ESD protection diode

    Relative intensity noise

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Current tuning wavelength range



    0.6


    nm/mA


    Temperature-tuned wavelength range



    0.06


    nm/K


    Thermal resistance (VCSEL chip).

    Rthermal

    3


    5

    K/mW


    Edge mold suppression ratio


    25



    dB

    I = 2 mA

    Beam divergence angle

    θ

    10


    25

    °

    Popt = 0.3 mW, full width 1/e2

    Spectral line width



    100


    MHz

    Popt = 0.3 mW

     

    Thermoelectric chiller

    (TEC) characteristics

    unit

    Minimum

    Typical values

    Maximum

    Note:

    thermoelectric chiller current

    mA

    -150(Heating)


    +300 (Cooling)

    Proper Heart Sink Required

    NTC thermistor resistance value

    KΩ

    9.5

    10.0

    10.5

    T=25°C @10 KΩ

    NTC Thermistor Resistance Value (Formula)

    KΩ

    10/exp{3892-(1/289K-I/TOP)}


    Spectrum

    5b3382803bf82.png

     

    Optical power - current curve (at 25°C).

    5d5558739e577.png

     

    Temperature/wavelength tuning characteristics with semiconductor refrigerator (TEC) current

    5b3383065de1e.png

     

    Fabry-Perot spectrum

    3.png

     

    Pin definition

    6.png

     

    Absolute maximum rating

    Item

    unit

    Minimum

    Typical values

    Maximum

    Storage temperature

    ℃

    -40

    25

    125

    Chip temperature

    ℃

    +10

    25

    40

    Operating current

    mA

    0

    2

    2.5

    Forward voltage

    V

    0.8

    1.2

    1.8

    Semiconductor Refrigerator (TEC) Current

    mA

    -150

    -

    +300

    Welding temperature *

    ℃

    100

    130

    270

    Power consumption

    mW

    -

    -

    5

    (* The temperature of the semiconductor cooling device (TEC) must be below 150°C).

     

    Ordering information

    MP-VCS-□□□□-☆-A8▽-XX

    □□□□： Wavelength

    0760:760nm

    0795:794.7nm

    ***

    1653.7：1653.7nm

    ☆ ：TEC

    0：Without TEC 1：With TEC

    ▽：Wavelength Tolerance 1：±0.5nm

    2：±1.5nm

    XX: Package TO46


    Safety and Operational Precautions

    The device operates at a reverse bias voltage and must not be reversed. If the photodiode operates beyond its maximum rating, it may cause damage to the device or pose a safety hazard. The power supply used for this component must not exceed the maximum peak optical power.

    Electrostatic protection – Electrostatic discharge (ESD) is the leading cause of unexpected laser diode failure. When operating photodiodes, strict anti-static measures must be taken: use anti-static wristbands, grounding work surfaces, and strictly follow anti-static operating specifications


    Optional Configurations

    --

    Downloads

    794.7nm 0.5mW SM VCSEL laser diode with TEC.pdf

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  • Product title: 794.7nm 0.5mW SM VCSEL laser diode with TEC
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