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1000-1200nm Broadband SOA Laser Diode

Overview

1000-1200nm Broadband SOA Laser Diode

This product is a high-performance semiconductor optical amplifier designed for the 1000-1200nm near-infrared band. Based on the mature InGaAs/InP material system, quantum dot or strain quantum well active region technology is used, combined with a tapered ridge waveguide structure, to achieve a perfect balance of high gain, wide bandwidth, and low noise. Both ends of the device are coated with anti reflective coatings (reflectivity<0.001%), effectively suppressing Fabry Perot oscillations and ensuring stable operation in amplification mode. It is suitable for fields such as fiber optic communication, sensing, and laser radar

Grace Guly

Phone:+86 13003168941

E-mail:grace@idealphtonics.com

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  • 10+ 10 Years of Experience
  • 50 50 + Countries Bussiness
  • 10000 10k + Diodes sold worldwide
  • 30 30+ Invention patent
  • 10 10+ Advanced Optical Solutions