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1000-1200nm High gain SOA Laser Diode
1000-1200nm High gain SOA Laser Diode
This product is a high-performance semiconductor optical amplifier designed for the 1000-1200nm near-infrared band. Based on the mature InGaAs/InP material system, quantum dot or strain quantum well active region technology is used, combined with a tapered ridge waveguide structure, to achieve a perfect balance of high gain, wide bandwidth, and low noise. Both ends of the device are coated with anti reflective coatings (reflectivity<0.001%), effectively suppressing Fabry Perot oscillations and ensuring stable operation in amplification mode. It is suitable for fields such as fiber optic communication, sensing, and laser radar
Grace Guly
Phone:+86 13003168941
E-mail:grace@idealphtonics.com
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Product InformationModel Operating WavelengthOperating Bandwidth Operate
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