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  • 1080nm High-Gain Semiconductor Optical Amplifier

    A high gain semiconductor optical amplifier designed for the 1080nm wavelength band. By using proprietary anti reflective coating technology and ridge waveguide design, high fidelity and high gain amplification of weak optical signals can be achieved. This series of products features high gain, high saturation output power, and high polarization extinction ratio, and offers two different product forms: component level butterfly package SOA (suitable for system integration) and modular integrated amplifier (controller all-in-one, plug and play) to meet the diverse needs of scientific research experiments and commercial systems.

    Product features:High gain coefficient; narrowband optimized amplification; low-power operation; excellent signal-to-noise ratio; superior temperature stability

    Part Number:MP-SOA-1080-35db-25-XA

    Application area:Precision laser measurement | quantum optics experiment | fiber optic sensing system | medical diagnostic equipment | research-grade optical system

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    Main parameters
  • Core parameters
  • Operating Wavelength Operating Bandwidth

    1080nm 25nm

  • Dimension Drawing
  • General Parameters

    Detailed Specifications

    Recommended Operating Conditions

    @ CW, housing mounted on a heat sink at room temperature

    Parameter

    Min.

    Typ.

    Max.

    Unit

    Chip Temperature

    20

    25

    30

    °C

    Forward Current

    400

    500

    mA

    Input Optical Power

    -40

    -25

    10

    dBm

    * The current for maximum gain spectral width may vary by batch.

     

    Gain Characteristics

    @ CW, 25°C,400 mA, input signal: -25 dBm at maximum gain wavelength

    Parameter

    Min.

    Typ.

    Max.

    Unit

    Small-Signal Gain @ 400 mA

    31

    35

    dB

    Saturated Output Power @ 400 mA (-3 dB)

    12

    15

    dBm

    Average Gain Wavelength

    1070

    1080

    1095

    nm

    Gain Bandwidth (FWHM)

    20

    25

    nm

    Noise Figure

    7

    dB

    Noise Figure Formula:

    NF=10log 10(2P ase /Ghν)

    [D. Baney et al., Fiber Technology, 6, 122 (2000)]

     

    Amplified Spontaneous Emission (ASE) Characteristics

    @ CW, 25°C, 400 mA, no input signal

    Parameter

    Min.

    Typ.

    Max.

    Unit

    Output Power (Per Port)

    40

    mW

    Forward Voltage

    1.5

    1.8

    V

    Average Wavelength

    1070

    1080

    1095

    nm

    Bandwidth (FWHM)

    20

    25

    nm

    Ripple (RMS)**

    0.04

    0.2

    dB

    Polarization Extinction Ratio (PER)

    15

    18

    dB

    Polarization

    TE

    ** Measured within 1 nm range near the spectral peak with 20 pm resolution.

     

    Absolute Maximum Ratings

    Parameter

    Min.

    Max.

    Unit

    Output Optical Power

    500

    mW

    Input Optical Power

    20

    dBm

    Forward Current

    800

    mA

    Reverse Voltage

    2

    V

    TEC Current

    3

    A

    TEC Voltage

    4

    V

    Chip Operating Temperature

    10

    40

    °C

    Housing Operating Temperature

    0

    70

    °C

    Storage Temperature

    -40

    85

    °C

    Lead Soldering Temperature (Max. 10 s, max housing temperature 120 °C)

    300

    °C

    Fiber Bend Radius

    3

    cm

     

    Typical performance (for reference only)

    @CW, the case is mounted on room temperature heatsink

    Gain spectra at different currents

    2.1.png

     

    Gain and Output power vs. Input signal

    2.2.png

     

    Gain spectra at different input signals

    2.3.png

     

    Spectra of amplified optical signal

    2.4.png

     

    ASE spectra(no input signal)

    2.5.png

     

    Output power at different input signals

    2.6.png

     

    Thermistor Specifications

    Fiber Specifications

    Parameter

    Value

    Unit

    Parameter

    PM980

    HI1060

    Unit

    Type

    NTC

    Numerical Aperture, typical

    0.12

    0.14

    Resistance @ 25 °C

    10 ± 0.1

    Cutoff Wavelength

    900 ± 70

    920 ±50

    Nm

    Beta (25–85 °C)

    3435 ± 1%

    K

    Mode Field Diameter (@ 1060 nm)

    6.6 ± 0.3

    6.2 ± 0.3

    μm

    1.2.png 

    Cladding Diameter

    125±1

    125±1

    μm

    Coating Diameter

    245±15

    245±15

    μm

    Loose Tube Diameter (Optional)

    900

    900

    μm

    Connector

    FC/APC (narrow key)

    Connector Alignment aligned with PANDA fiber

    1.3.png 

    Output light is polarized along the slow axis of the PM fiber.

     

    Operating InstructionsSafety and Operating Instructions

    The light emitted by this device is invisible and harmful to human eyes. Do not look directly at the fiber connector during operation. Appropriate laser safety goggles must be worn when operating with the connector uncovered.

    Absolute maximum ratings may only be applied to the device for a short time. Long-term operation at or simultaneous exposure to multiple maximum ratings may cause device damage and reduce reliability. Operation beyond the maximum ratings may lead to device failure and safety risks. A matched power supply shall be used to ensure that the maximum forward current is not exceeded.

    Devices mounted on heat spreaders require a proper heat sink. Secure the device to the heat sink with four screws (cross-tightened with an initial torque of 0.075 N·m and a final torque of 0.15 N·m) or clamps. The flatness deviation of the heat sink surface shall be less than 0.05 mm. Indium foil or flexible thermal interface materials are recommended between the device base and the heat sink. Thermal grease is not recommended.

    Avoid optical back-reflection, which may degrade spectral performance and power stability, and cause catastrophic facet damage. The use of an optical isolator is strongly recommended to suppress back-reflection.

    Do not pull the optical fiber. Do not bend the fiber with a bending radius less than 3 cm. Protect the fiber end-face from contamination and damage during installation. After removing the dust cap, clean the fiber end-face in one direction with lens wipes or cotton swabs moistened with isopropyl alcohol or ethanol. Only operate the device with clean fiber connectors.

    ESD Protection – Electrostatic discharge is a major cause of unexpected product failure. Strict ESD protection measures must be taken. Maintain ESD control during installation, including anti-static wristbands, grounded work surfaces and standardized anti-static operation procedures.

    667a775f5d715.png

    Optional Configurations

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  • Product title: 1080nm High-Gain Semiconductor Optical Amplifier
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