794.7nm 0.5mW SM VCSEL laser diode with TEC

The 794.7 nm vertical-cavity surface-emitting laser is a vertically light-emitting GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process, with TO5 package.It achieves wavelength tuning by adjusting laser drive current and operating temperature. Integrated with built-in Thermoelectric Cooler (TEC) and monitoring Photodetector (PD), this laser is specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications. Featuring ultra-narrow linewidth and wide tuning range enabled by TEC temperature control, it is a cost-effective option for rubidium atomic spectrum D1 transition research.

View Now

763nm 0.5mW SM VCSEL laser diode without TEC

The 763 nm vertical-cavity surface-emitting laser (VCSEL) is a vertically light-emitting laser fabricated from GaAsP/AlGaAs single-mode semiconductor laser chip grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process.Packaged in TO46 housing, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD). Specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications, its narrow linewidth characteristic makes it an ideal choice for oxygen analyzers without TEC, combining excellent performance and low cost, suitable for the manufacturing of analytical instruments related to oxygen detection.

View Now

763nm 0.5mW SM VCSEL laser diode with TEC

The 763 nm vertical-cavity surface-emitting laser is a GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process. Adopting TO39 metal hermetic package, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD).

View Now

760nm 0.5mW SM VCSEL laser diode without TEC

The 760 nm vertical-cavity surface-emitting laser (VCSEL) is a vertically light-emitting single-mode semiconductor laser. Its chip is fabricated from GaAsP/AlGaAs material grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process, and packaged in TO46 hermetic housing.It realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and monitoring Photodetector (PD), and is specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications. With outstanding narrow linewidth performance, it serves as a cost-effective ideal solution for oxygen concentration analysis without auxiliary cooling modules.

View Now

760nm 0.5mW SM VCSEL laser diode with TEC

The 760 nm vertical-cavity surface-emitting laser is a GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process. Adopting TO39 metal hermetic package, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD).

View Now

5.26um 20mW DFB-CW QCL Continuous Wave Quantum Cascade Laser

QCL is a semiconductor laser emitting in the mid‑infrared range (4 μm to 10 μm). Due to its emission mechanism being completely different from conventional laser diodes, QCLs have attracted significant attention as an innovative solution for mid‑infrared applications such as trace gas analysis in environmental monitoring.

View Now

4.57um 20mW DFB-CW QCL Continuous Wave Quantum Cascade Laser

QCL is a type of semiconductor laser that emits in the mid-infrared region (from 4 um to 10um).Due to its emission principle being completely different from that of conventional laser diodes (LD),QCL has attracted great attention as an innovative solution for mid-infrared applications such as trace gas analysis in environmental monitoring.The quantum cascade laser adopts SPC (Single Phonon Continuum) depopulation and DFB (Distributed Feedback) structure,enabling continuous-wave mid-infrared laser emission at room temperature.By controlling the operating temperature of the chip using a Peltier element integrated in the HHL package,it is possible to tune the emission wavelength without mode hopping while maintaining longitudinal single-mode operation.

View Now

4.53um 20mW DFB-CW QCL Continuous Wave Quantum Cascade Laser

QCL is a semiconductor laser that emits in the mid-infrared region (4 um to 10 um). Due to its emission mechanism being completely different from conventional laser diodes, QCLs have attracted significant attention as an innovative solution for mid-infrared applications such as trace gas analysis in environmental monitoring.The quantum cascade laser utilizes SPC (Single Phonon Continuum) depopulation and a DFB (Distributed Feedback) structure, emitting continuous-wave mid-infrared laser radiation at room temperature.The operating temperature of the chip is controlled by a Peltier element housed in an HHL package, allowing mode-hop-free tuning of the emission wavelength while maintaining longitudinal single-mode operation.

View Now

4.33um 20mW DFB-CW QCL Continuous Wave Quantum Cascade Laser

This quantum cascade laser adopts SPC (Single Phonon Continuum) and DFB (Distributed Feedback) structures, emitting in continuous-wave (CW) mid-infrared at room temperature.The operating temperature of the chip is controlled by a Peltier element mounted in an HHL package, enabling mode-hop-free tuning of the emission wavelength while maintaining longitudinal single-mode operation.

View Now

1690nm 10mW PM SLD Laser Diode

The 1690nm SLD is a broadband SLD operating in inherent superluminescent emission mode. Its superluminescent characteristic delivers broader spectral bandwidth under higher driving current, while conventional ASE-based SLEDs feature narrowed spectral bandwidth at elevated current. Its low coherence suppresses Rayleigh backscattering noise. Combined with high output power and wide spectral width, it counteracts optical receiver noise and improves spatial resolution for OCT and measurement sensitivity for sensing applications. This 1690 nm SLED adopts a 14-pin butterfly package and complies with Bellcore GR-468-CORE specifications.

View Now

1650nm 10mW PM SLD Laser Diode

1650 nm superluminescent diode (SLD) module, serving as an incoherent light source for various optical measurement scenarios. It emits incoherent light with a broad spectrum and high output power via polarization-maintaining fiber (PMF).

View Now

1600nm 10mW PM SLD Laser Diode

The 1600nm SLD is a broadband SLD operating in inherent superluminescent emission mode. Its superluminescent characteristic delivers broader spectral bandwidth under higher driving current, while conventional ASE-based SLEDs feature narrowed spectral bandwidth at elevated current. Its low coherence suppresses Rayleigh backscattering noise. Combined with high output power and wide spectral width, it counteracts optical receiver noise and improves spatial resolution for OCT and measurement sensitivity for sensing applications. This 1600 nm SLED adopts a 14-pin butterfly package and complies with Bellcore GR-468-CORE specifications.

View Now