850nm 2mW TO46 SM VCSEL Laser Diode(without TEC)

With optimized optical characteristics, the 850 nm single-mode VCSEL is an ideal choice for high-demand sensing system applications. Its innovative chip design suppresses high-order longitudinal and transverse modes, and features stable linear polarization performance.

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850nm 2mW TO46 SM VCSEL Laser Diode(with TEC)

With optimized optical characteristics, the 850 nm single-mode VCSEL is an ideal choice for high-demand sensing system applications. Its innovative chip design suppresses high-order longitudinal and transverse modes, and features stable linear polarization performance.

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850nm 1mW TO46 SM VCSEL Laser Diode(without TEC)

With optimized optical characteristics, the 850 nm single-mode VCSEL is an ideal choice for high-demand sensing system applications. Its innovative chip design suppresses high-order longitudinal and transverse modes, and features stable linear polarization performance.

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850nm 1mW TO46 SM VCSEL Laser Diode(with TEC)

Featuring optimized optical properties, the 850 nm single-mode VCSEL is an ideal selection for high-demand sensing system applications. Its innovative chip design suppresses high-order longitudinal and transverse modes while delivering stable linear polarization performance.

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 5)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 4)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 3)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 2)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 1)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.1mW TO46 VCSEL Laser Diode with TEC

The 795 nm TEC-cooled TO-packaged VCSEL is a vertically-emitting single-mode gallium arsenide laser diode grown via MOVPE process. Adopting TO package with built-in Thermoelectric Cooler (TEC), it realizes precise wavelength tuning through both laser drive current adjustment and temperature control, and is specially designed for TDLAS applications.

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763nm 1mW TO8 SM VCSEL laser diode

Single-mode VCSEL lasers feature high optical output power, narrow linewidth and excellent consistency, which are highly favored by domestic research customers.Our available in-stock wavelengths include 760 nm and 764 nm. Among them, the 760 nm laser is applied for TDLAS oxygen detection; the 795 nm model is for Rb atomic clock experiments; and the 852 nm model is for Cs atomic cooling.

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760nm 1mW TO8 SM VCSEL laser diode

Single-mode VCSEL lasers feature high optical output power, narrow linewidth and excellent consistency, which are highly favored by domestic research customers.Our available in-stock wavelengths include 760 nm and 764 nm. Among them, the 760 nm laser is applied for TDLAS oxygen detection; the 795 nm model is for Rb atomic clock experiments; and the 852 nm model is for Cs atomic cooling.

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