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    • 850nm 1mW TO46 SM VCSEL Laser Diode(without TEC)

    With optimized optical characteristics, the 850 nm single-mode VCSEL is an ideal choice for high-demand sensing system applications. Its innovative chip design suppresses high-order longitudinal and transverse modes, and features stable linear polarization performance.

    Product features：Vertical-cavity surface-emitting laser architecture；High operational reliability；Low power consumption design；TO46 metal hermetic package；High-speed modulation capability

    Part Number：MP-VCS-850-1-TO46-SM

    Application area：Data Center | Consumer Electronics | Industrial Sensing | Optical Fiber Access Network | Scientific Research Experiments

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    Main parameters
  • Core parameters

  • Center Wavelength

    850nm

  • Dimension Drawing
    • General Parameters

    Model parameters

    Parameters

    symbol

    Min. value

    Typical values

    Max. value

    unit

    Note:

    Incident wavelength

    λR

    840

    850

    860

    nm

    T = 20°C, ITEC = 0, POP=   0.5 mW

    Threshold current

    ITH


    0.50


    mA

    T = 20°C

    Output power

    Popt

    0.50



    mW

    T = 0 … 50°C

    Threshold voltage

    UTH


    1.80


    V


    Laser current

    IOP



    2.0

    mA

    Popt = 0.5 mW

    Laser voltage

    UOP


    2.0


    V

    Popt = 0.5 mW

    Electro-optical conversion rate

    ηWP


    12


    %

    Popt = 0.5 mW

    Slope performance

    ηS


    0.3


    W/A

    T = 20°C

    Differential series resistors

    RS


    250


    Ω

    Popt = 0.5 mW

    3dB modulation bandwidth

    ν3dB

    0.10



    GHz

    Popt = 0.5 mW

    (Due to ESD protection diodes)

    Relative noise intensity

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Wavelength-tuned current



    0.6


    nm/mA


    Wavelength Tuning Temperature



    0.06


    nm/K


    Thermal resistance

    Rthermal

    3


    5

    K/mW


    Edge mode suppression


    30



    dB


    Beam divergence

    θ

    10


    25

    °

    Popt = 0.5 mW full 1/e2 bandwidth

    Spectral bandwidth

    Δν


    100


    MHz

    Popt = 0.5 mW

    TEC current

    ITEC



    500

    mA

    Proper radiator is required

    NTC thermistor


    9.5

    10.0

    10.5

    kΩ

    T= 25°C,

    NTC temperature dependence


    10/exp[3892·( 1/298K-1/TOP)]

    kΩ


    Wavelength tuning TEC current


    0.008

    nm/mA

    TEC current < 200 mA

     

    Absolute maximum

    ● Storage temperature -40~125°C

    ● Operating temperature -20~80°C

    ● Electrical power loss of 5 mW

    ● Forward laser current 2 mA

    ● Reverse current 10 mA

    ● Welding temperature* 270C°

    ● *TEC temperature must be below 150°C


    Spectral diagram

    Higher-order modes are strongly suppressed and the spectral bandwidth is extremely narrow

    5d21e67dc99c9.jpg

     

    Beam profile

    Beam profile

    The far-field light intensity distribution of single-mode VCSEL is complete in accordance with the Gaussian mode

    5d21e6cba83f7.jpg


    LIVT characteristic curves

    You will benefit from linear performance and low threshold currents over a wide temperature range

    5d21e790eab56.jpg

     

    Temperature/wavelength under TEC current tuning

    5d21e7eb470be.png


    Optional Configurations

    --

    Downloads

    850nm 1mW TO46 SM VCSEL Laser Diode(without TEC).pdf

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  • Product title: 850nm 1mW TO46 SM VCSEL Laser Diode(without TEC)
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