1180nm 220mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, with a center wavelength of 1180nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

View Now

1150nm 230mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, with a center wavelength of 1150nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

View Now

1150nm 210mW TypeB Gain Chip (TO Package)

A semiconductor optical gain chip with TO packaging, with a center wavelength around 1150nm. It uses deep anti reflection (AR) coating to suppress the Fabry Perot oscillation of the chip itself, and relies on external frequency selective elements (such as diffraction gratings) to achieve single-mode laser emission. B-type design usually refers to a bent waveguide structure aimed at suppressing gain ripple and achieving non hopping mode tuning.

View Now

1105nm 350mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

View Now

1105nm 200mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip packaged in TO, specifically designed for external cavity semiconductor lasers. The chip is coated with a deep anti reflection (AR) coating on both end faces and relies on external frequency selective elements (such as diffraction gratings) to generate laser, thereby achieving a wide tuning range and high edge mode suppression ratio.

View Now

1060nm 210mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip with TO packaging, with a center wavelength of 1060nm, designed specifically for external cavity semiconductor lasers. The chip is coated with a deep anti reflection (AR) coating on both end faces and relies on external frequency selective elements (such as diffraction gratings) to generate laser, thereby achieving a wide tuning range and high edge mode suppression ratio.

View Now

1030nm 110mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip with TO packaging, with a center wavelength of 1030nm, designed specifically for external cavity semiconductor lasers. The chip is coated with a deep anti reflection (AR) coating on both end faces and relies on external frequency selective elements (such as diffraction gratings) to generate laser, thereby achieving a wide tuning range and high edge mode suppression ratio.

View Now

950nm 200mW TypeB Gain Chip (TO Package)

A B-type (bent stripe) gain chip with TO packaging, featuring a central wavelength of 950nm, is specifically designed for external cavity semiconductor lasers. The chip is coated with deep anti-reflection (AR) layers on both end facets and requires external frequency-selecting components (such as diffraction gratings) to generate laser output, enabling wide tuning range and high side-mode suppression ratio. The B-type bent stripe design effectively suppresses gain ripple, ensuring mode-hop-free tuning and suitability for applications demanding high spectral purity.

View Now

905nm 200mW TypeB Gain Chip (TO Package)

A Type B (wavy grating) gain chip with TO packaging, featuring a central wavelength of 905nm, is specifically designed for external cavity semiconductor lasers. The chip is coated with deep anti-reflection (AR) layers on both end faces and requires external frequency-selective elements (such as diffraction gratings) to generate laser output, enabling wide tuning ranges and high side-mode suppression ratios. The Type B wavy grating design effectively suppresses gain ripple, ensuring smooth mode-free tuning and making it suitable for applications demanding high spectral purity。

View Now

1530-1557nm Semiconductor Optical Amplifier

Semiconductor Optical Amplifier (SOA) is a PN junction device with a quantum well structure. Under external forward bias, population inversion is achieved, which induces stimulated radiation via optical signals to realize optical signal amplification.SOA features low cost, compact size and easy integration. In the era of new infrastructure, it is widely applied in access networks, metropolitan network edges and optical fiber sensing fields.

View Now

1550nm C-band 14dBm Semiconductor Optical Amplifier(Nonlinear)

1550nm SOA is a polarization-insensitive optical amplifier. Adopting advanced epitaxial wafer growth and optoelectronic packaging technology, it achieves high saturated output power, low noise figure and high gain over a broad spectral bandwidth.

View Now

1300nm Booster Optical Amplifier on Submount

A high-power boost optical amplifier (BOA) with a center wavelength of 1300nm and packaged in a chip on carrier (CoC). This product belongs to the MP series carrier integrated optical amplifier, designed specifically for application scenarios that require high gain, low noise, and compact integration.

View Now