1120nm 6W High-Power Broad-Area Laser Diode

Proprietary mirror coating technology, high reliability, reliable Au/Sn bonding between the chip and composite submount, RoHS compliant.

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1120nm Fiber-Coupled Open Heat Sink High-Power Laser Diode (11W, 400 μm Core)

Broad-area laser diodes (also referred to as broad-emitter semiconductor lasers, broad-stripe or broad-emitter laser diodes, single-emitter laser diodes, and high-brightness diode lasers) are edge-emitting laser diodes in which the emission area on the front facet is shaped as a broad stripe.Since the emitter is asymmetric, the beam properties differ in the two orthogonal directions.

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1100nm 400mW Fiber-Coupled Laser Diode

The fiber-coupled laser diodes from idealphotonics feature a compact structure, easy integration and high stability. They also reduce optical loss during long-distance transmission, maintain beam quality, and meet the requirements of high-demanding applications.

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1100nm 200mW Fiber-Coupled Laser Diode

The fiber-coupled laser diodes from idealphotonics feature a compact structure, easy integration and high stability. They also reduce optical loss during long-distance transmission, maintain beam quality, and meet the requirements of high-demanding applications.

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1080nm 200mW Fiber-Coupled Laser Diode

The fiber-coupled laser diodes from idealphotonics feature a compact structure, easy integration and high stability. They also reduce optical loss during long-distance transmission, maintain beam quality, and meet the requirements of high-demanding applications.

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1280nm 5W Broad-Area Laser Diode

Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.

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1210nm 9W Broad-Area Laser Diode

Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.

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1210nm 4W Broad-Area Laser Diode

Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.

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1190nm 6W Broad-Area Laser Diode

Broad-area lasers, through optimized emission area design, deliver high-power, high-efficiency, low-thermal-load laser output, and are widely used in industrial, medical, scientific research, communications and other fields. Its advantages lie in excellent thermal management, low energy loss and superior beam quality, making it suitable for high-power requirements and precision applications.

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1270nm 350mW PM FP laser diode with FBG

We offer a broad portfolio of high-power, spatially single-mode laser diodes covering the wavelength range from 780 nm to 1340 nm.These devices are available in 9 mm TO-can packages with free-space beams, as well as in standard 14-pin butterfly packages with single-mode or polarization-maintaining (PM) fiber coupling.

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1240nm 350mW PM FP laser diode with FBG

We offer a broad portfolio of high-power, spatially single-mode laser diodes covering the wavelength range from 780 nm to 1340 nm.These devices are available in 9 mm TO-can packages with free-space beams, as well as in standard 14-pin butterfly packages with single-mode or polarization-maintaining (PM) fiber coupling.

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1280nm 5W High-Power Broad-Area Laser Diode

Proprietary mirror coating technology, high reliability, reliable Au/Sn bonding between the chip and composite submount, RoHS compliant.

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