280nm 0.5mW UV LED Laser Diode

The 280nm LED is a deep ultraviolet LED with a peak emission wavelength from 275nm to 285nm. The LED is hermetically sealed in a metal-glass welded package. It incorporates advanced semiconductor materials, chip design, and a robust package with advanced optical properties. This is designed for optical sensing, medical, and analytical instrumentation for chemical and biological analysis in the deep UV spectral range.

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275nm 0.5mW UV LED Laser Diode

The 275nm LED is a deep ultraviolet LED with a peak emission wavelength from 270nm to 280nm. The LED is hermetically sealed in a metal-glass welded package. It incorporates advanced semiconductor materials, chip design, and a robust package with advanced optical properties. This is designed for optical sensing, medical, and analytical instrumentation for chemical and biological analysis in the deep UV spectral range.

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265nm 0.5mW UV LED Laser Diode

The 265nm LED is a deep ultraviolet LED with a peak emission wavelength from 260nm to 270nm. The LED is hermetically sealed in a metal-glass welded package. It incorporates advanced semiconductor materials, chip design, and a robust package with advanced optical properties. This is designed for optical sensing, medical, and analytical instrumentation for chemical and biological analysis in the deep UV spectral range.

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255nm 0.3mW UV LED Laser Diode

The 255nm LED is a deep ultraviolet LED with a peak emission wavelength from 250nm to 260nm. The LED is hermetically sealed in a metal-glass welded package. It incorporates advanced semiconductor materials, chip design, and a robust package with advanced optical properties. This is designed for optical sensing, medical, and analytical instrumentation for chemical and biological analysis in the deep UV spectral range.

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1325nm 200mW TypeB Gain Chip (TO Package)

This product is a high-performance B-type gain chip with a standard TO package and a central wavelength of 1325nm. Its core design features a bent grating waveguide structure, specifically optimized for external cavity diode lasers (ECDL), aiming to achieve exceptional self-excitation suppression and broad spectral tuning capability.

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1310nm 200mW TypeA Gain Chip (TO Package)

This product is a high-performance Type A gain chip, featuring a standard TO package, specifically designed for external cavity semiconductor lasers (ECDL) operating in the 1310nm wavelength band. Its core function is to serve as a gain medium, which, when combined with external wavelength-selecting filters (such as diffraction gratings), enables broad-range mode-hop-free wavelength tuning.

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1270nm 220mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, with a center wavelength of 1270nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1270nm 200mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip with TO packaging, with a center wavelength of 1270nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and deep anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1270nm 200mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, with a center wavelength of 1270nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1260nm 210mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip with TO packaging, with a center wavelength of 1260nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and deep anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1260nm 120mW TypeA Gain Chip (TO Package)

A type A (straight stripe) gain chip with TO packaging, with a center wavelength of 1260nm, designed specifically for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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1200nm 230mW TypeB Gain Chip (TO Package)

A B-type (curved stripe) gain chip packaged in TO, specifically designed for external cavity semiconductor lasers. The chip is coated with high reflectivity (HR) and deep anti reflectivity (AR) coatings on both end faces, and must rely on external frequency selective elements (such as diffraction gratings) to generate laser light, thereby achieving a wide tuning range and high edge mode suppression ratio.

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