1532nm PM Ultra-Narrow Linewidth Single-Frequency Laser Diode

1532nm PM Ultra-Narrow Linewidth Single-Frequency Laser Diode

The 1532 nm ultra-narrow linewidth single-frequency laser is a high-performance semiconductor laser thatintegrates silicon photonic chip technology, precise optical path design, and advanced packaging processes.

Product features：Central wavelength 1532nm; Optical output 60mW; Narrow linewidth <5KHz; with TEC; Optical Isolation 50dB; Pigtail Length 1.0±0.1m; PMF; FC/APC

Part Number：MP-U-NL-1532-A-A81-PA

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Main parameters
General Parameters
Optional Configurations
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Main parameters

Core parameters

Wavelength Output Power Linwidth

1532nm 60mW 5kHz

Dimension Drawing

General Parameters

Limit parameter

During use, the environmental conditions and parameter settings should not exceed the following limit values; otherwise, it may lead to poor performance of the device, shorten the product life, or cause damage to the device. Any product problems caused by this are not covered by the warranty.

Specification	Symbol	Condition	Min.	Typ.	Max.	Unit
Storage Temperature	TS		-40		85	℃
LD forward voltage	VLD			1.6	1.8	V
LD forward current	ILD				500	mA
TEC current	ITEC				1.5	A
TEC voltage	VTEC				3	V

Optical and electrical parameters (TLD=25℃)

Specification	Symbol	Condition	Min.	Typ.	Max.	Unit
Threshold Current	Ith	CW		20		mA
Central Wavelength	λC		1531	1532	1533	nm
Fiber optical power	Pf	CW		60	70	mW
Lorentz line width *	FWHM	CW			5	kHz
Light Noise	PhN	light noise@10Hz		7E+05		Hz rms^2/Hz
Light Noise	PhN	light noise@200Hz		6E+03		Hz rms^2/Hz
Relative Intensity Noise	RIN	≥ 1kHz			-140	dB/Hz
Side Mode Suppression Ratio	SMSR	CW		50		dB
Polarization extinction ratio	PER	CW	20			dB
Optical isolation ratio	ISO			50		dB
TEC set temperature	TTEC	CW	15		45	℃
Operating Temperature	To		-20		70	℃
Operating Humidity	%		5		85	%