800nm DBR Laser Diode

The 800 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is fabricated based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of diodes outputs single spatial mode laser beams, with passivated facet design to guarantee operational reliability. The 800 nm DBR device can serve as a low-noise pumping source, and is applicable to biomedical diagnosis and imaging fields.

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794.978 nm DBR Laser Diode

The 794.978 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is fabricated based on monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of diodes outputs single spatial mode laser beams, with passivated cavity facet design to guarantee device reliability. The 794.978 nm DBR device is applied for rubidium (Rb) atomic spectral analysis and quantum sensing fields. It has passed spectral certification, which can precisely match the D1 transition spectral line of rubidium within the temperature range of room temperature ±10 °C.

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785nm DBR Laser Diode

The 785 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode adopts advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of devices outputs single spatial mode laser beams, with passivated facet design for superior operational reliability. Specially designed for rubidium (Rb) atomic spectroscopy applications, the laser has passed spectral certification, which can stably and precisely cover the D2 transition spectral line of rubidium within a temperature range of room temperature ±10 °C.

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780.241 nm DBR Laser Diode

The 780.241 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode adopts advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of devices outputs single spatial mode laser beams, with passivated facet design for superior operational reliability. Specially designed for rubidium (Rb) atomic spectroscopy applications, the laser has passed spectral certification, which can stably and precisely cover the D2 transition spectral line of rubidium within a temperature range of room temperature ±10 °C.

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778.105nm DBR Laser Diode

The 778.105 nm DBR series high-performance edge-emitting laser diodes adopt the company’s advanced monolithic single-frequency GaAs laser technology. This laser series delivers single spatial mode beam output and applies end-face passivation technology for enhanced reliability. The 778.105 nm DBR series devices serve as low-noise pump sources for biomedical diagnosis and imaging applications.

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776.061 nm DBR Laser Diode

The 776.061 nm DBR series high-performance edge-emitting laser diodes adopt the company’s advanced monolithic single-frequency GaAs laser technology. This laser series delivers single spatial mode beam output and applies end-face passivation technology for enhanced reliability. The 776.061 nm DBR series devices serve as low-noise pump sources for biomedical diagnosis and imaging applications.

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770.108nm DBR Laser Diode

The 770.108 nm DBR series high-performance edge-emitting laser diodes are developed with advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. This laser series provides single spatial mode beam output and adopts facet passivation technology to ensure long-term reliability.770.108 nm DBR devices are widely applied in potassium-based atomic spectroscopy. Spectroscopic certification guarantees precise coverage of the potassium D1 transition line within a temperature range of ±10 °C relative to room temperature.

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766.700nm DBR laser diode

The 766.700nm DBR series high-performance edge-emitting laser diodes are based on Advanced OptoElectronic's state-of-the-art monolithically integrated single-frequency gallium arsenide (GaAs) laser technology. These laser diodes deliver a single spatial mode beam and feature passivated facet design to ensure high reliability. The 766.700nm DBR devices are ideal for potassium (K)-based atomic spectroscopy applications. The series is spectrally certified to precisely cover the potassium D2 transition line over an ambient temperature range of ±10°C.

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760nm DBR laser diode

The 760nm DBR series high-performance edge-emitting laser diodes are fabricated based on monolithically integrated single-frequency GaAs laser technology. This series of laser diodes delivers a single spatial mode beam and features a passivated facet design to ensure high reliability. The 760nm DBR devices are suitable for applications including oxygen sensing, LiDAR, and remote sensing.

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739 nm DBR Laser Diode

The 739 nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency GaAs laser technology.This laser series delivers a single spatial mode beam and features end-face passivation processing to ensure high reliability.Devices in the 739 nm DBR series are widely used for frequency doubling, ytterbium atomic spectroscopy, and Raman applications.

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737 nm DBR Laser Diode

The 737 nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency GaAs laser technology.This laser series delivers a single spatial mode beam and features end-face passivation processing to ensure high reliability.Devices in the 737 nm DBR series are widely used for frequency doubling, ytterbium atomic spectroscopy, and Raman applications.

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730nm DBR laser diode

The 730 nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency GaAs laser technology.This laser series delivers a single spatial mode beam and features end-face passivation processing to ensure high reliability.Devices in the 730 nm DBR series are widely used for frequency doubling, ytterbium atomic spectroscopy, and Raman applications.

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