Nominal Wavelength

737 ± 0.6 nm

Power Range

40–80 mW

Max Operating Current (CW & Pulsed)

200 mA

Optical Power at Max Current

80 mW

Nominal Slope Efficiency

0.8 W/A

Nominal Threshold Current

80 mA

Storage Temperature

℃

0

–

70

Case Operating Temperature

℃

5

–

70

Laser Chip Operating Temperature¹

℃

5

–

45

Laser Series Resistance

Ω

–

2

–

Laser Forward Voltage @ LIV Current

V

–

2

–

Laser Linewidth (Typ. @ LIV Current)

kHz

–

500

–

Beam Divergence @ FWHM (θ× θ⊥)

°

6×28

8×32

Side Mode Suppression Ratio (SMSR)

dB

–

-40

–

Polarization Extinction Ratio

dB

-17

-20

–

Laser Polarization

–

–

TE

–

Mode Structure

–

–

Fundamental Mode

–

Temperature Tuning Rate

nm/℃

–

0.06

–

Current Tuning Rate

nm/mA

–

0.002

–

Laser Reverse Voltage

V

–

–

0

Photodiode Forward Current

mA

–

–

10

Photodiode Reverse Voltage

V

–

–

50

TEC Current (TOSA)

A

–1.1

–

1.1

TEC Voltage (TOSA)

V

–3.0

–

3.0

TEC Current (TO-8)

A

–1.8

–

1.8

TEC Voltage (TO-8)

V

–2.2

–

2.2

Thermistor Resistance

kΩ

–

10

–