Parameter ¹

High power

Nominal wavelength (nm)²

800 ± 0.6

Power range

80-180

Maximum Operating Current (CW & Pulse) (mA)

250

Maximum Operating Current Hour Power (mW)

180

Nominal Slope Efficiency (W/A)

0.9

Nominal threshold current (mA)

60

Storage temperature

℃

0

-

70

Shell operating temperature

℃

5

-

70

The laser chip operating temperature ^{is 1}

℃

5

-

45

Laser series resistance

Ω

-

2

-

Laser forward voltage @LIV current

V

-

2

-

Laser line width, typical @LIV current

kHz

-

500

-

Beam Divergence Angle @FWHM (θ|| x θ⊥)

º

-

6x28

8 x 32

Edge-mode rejection ratio (SMSR)

dB

-

-40

-

Polarization extinction ratio

dB

-17

-20

-

Polarized state of the laser

TE

Pattern structure

Basic mode

Temperature tuning rate

nm/℃

-

0.06

-

Current tuning rate

nm/mA

-

0.002

-

Laser reverse voltage

V

-

-

0

Photodiode forward current

mA

-

-

10

Photodiode reverse voltage

V

-

-

50

TEC Current (TOSA)

A

-1.1

-

1.1

TEC Voltage (TOSA)

V

-3.0

-

3.0

TEC Current (TO-8)

A

-1.8

-

1.8

TEC Voltage (TO-8)

V

-2.2

-

2.2

Thermistors

kΩ

-

10

-