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770-900nm DBR Laser Diode

Overview

770-900nm DBR Laser Diode

The DBR series high-performance edge-emitting laser diodes are developed with advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. This laser series provides single spatial mode beam output and adopts facet passivation technology to ensure long-term reliability.770.108 nm DBR devices are widely applied in potassium-based atomic spectroscopy. Spectroscopic certification guarantees precise coverage of the potassium D1 transition line within a temperature range of ±10 °C relative to room temperature.


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