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852.347 nm DBR Laser Diode
The 852.347 nm DBR series high-performance edge-emitting laser diodes adopt advanced monolithic integrated single-frequency GaAs laser technology. This laser series delivers single transverse mode beam output and features facet passivation process for high reliability. The 852.347 nm DBR devices are suitable for cesium (Cs)-based atomic spectroscopy and Raman spectroscopy applications. Spectral certification ensures accurate tuning to the cesium atomic D2 transition line within ±10 °C around room temperature.
Product features:Precise atomic transition locking; advanced monolithic DBR technology; excellent beam and spectral characteristics; flexible power and modulation capability
Part Number:MP-DBR-852.347-140-14BF-PA
Application area:Quantum precision measurement and atomic clocks | Atomic, molecular and optical physics research | Nonlinear frequency conversion
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Center Wavelength
852.347nm

Detailed parameters
852.347nm (COS) package characteristics
Chip architecture | |||
Parameter 1 | HOT3 (High Operating Temperature) | Low power | High power |
Nominal wavelength (nm)2 | 852.347 ± 0.6 | ||
Power range (mW). | 10–30 | 40-80 | 80-240 |
Maximum operating current (CW & Pulsed) (mA). | 90 | 140 | 350 |
Optical power (mW) at maximum operating current | 30 | 80 | 240 |
Nominal Slope Efficiency (W/A). | 0.6 | 0.9 | 0.9 |
Nominal threshold current (mA). | 40 | 30 | 50 |
1. Characteristics at TC = 25 °C unless otherwise specified. Operating outside of these parameters voids warranty.
2. Hermetically sealed packages may contain CoS that are ± 1.2 nm from nominal.
3. HOT characteristics specified at 65 °C.
Available free-space package add-ons

Laser specifications
Parameters | unit | Minimum | Typical values | Maximum |
Storage temperature | °C | 0 | - | 70 |
Shell operating temperature | °C | 5 | - | 70 |
Laser chip operating temperature ¹ | °C | 5 | - | 45 |
Laser series resistance | Ω | - | 2 | - |
Forward voltage of the laser at LIV current | V | - | 2 | - |
Nominal laser line width at LIV current | kHz | - | 500 | - |
Beam divergence angle at half-height and full width (θ|| × θ⊥) | º | - | 6 x 28 | 8 x 32 |
Edge-mode rejection ratio (SMSR) | dB | - | -40 | - |
Polarization extinction ratio | dB | -17 | -20 | - |
Polarized state of the laser | TE | |||
Pattern structure | Basic mode | |||
Temperature tuning rate | nm/°C | - | 0.06 | - |
Current tuning rate | nm/mA | - | 0.002 | - |
Laser reverse voltage | V | - | - | 0 |
1. Operation below dew point not recommended without hermetically sealed package
Free-space Package adds-on
Parameters | unit | Minimum | Typical values | Maximum |
Photodiode forward current | mA | - | - | 10 |
Photodiode reverse voltage | V | - | - | 50 |
TEC Current (TOSA) | A | -1.1 | - | 1.1 |
TEC Voltage (TOSA) | V | -3.0 | - | 3.0 |
TEC current TO-8 | A | -1.8 | - | 1.8 |
TEC voltage TO-8 | V | -2.2 | - | 2.2 |
Thermistors | kΩ | - | 10 | - |
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.



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