info@idealphotonics.com
  • 852.347 nm DBR Laser Diode

    The 852.347 nm DBR series high-performance edge-emitting laser diodes adopt advanced monolithic integrated single-frequency GaAs laser technology. This laser series delivers single transverse mode beam output and features facet passivation process for high reliability. The 852.347 nm DBR devices are suitable for cesium (Cs)-based atomic spectroscopy and Raman spectroscopy applications. Spectral certification ensures accurate tuning to the cesium atomic D2 transition line within ±10 °C around room temperature.

    Product features:Precise atomic transition locking; advanced monolithic DBR technology; excellent beam and spectral characteristics; flexible power and modulation capability

    Part Number:MP-DBR-852.347-140-14BF-PA

    Application area:Quantum precision measurement and atomic clocks | Atomic, molecular and optical physics research | Nonlinear frequency conversion

    Add to Cart Request for Quotation Consult Favorite

    Main parameters
  • Core parameters
  • Center Wavelength

    852.347nm

  • Dimension Drawing
  • General Parameters

    Detailed parameters

    1.1.png 

     

    852.347nm (COS) package characteristics


    Chip architecture

    Parameter 1

    HOT3

    (High Operating Temperature)

    Low power

    High power

    Nominal wavelength (nm)2

    852.347 ± 0.6

    Power range (mW).

    10–30

    40-80

    80-240

    Maximum operating current (CW & Pulsed) (mA).

    90

    140

    350

    Optical power (mW) at maximum operating current

    30

    80

    240

    Nominal Slope Efficiency (W/A).

    0.6

    0.9

    0.9

    Nominal threshold current (mA).

    40

    30

    50

     

    1. Characteristics at TC = 25 °C unless otherwise specified. Operating outside of these parameters voids warranty.

    2. Hermetically sealed packages may contain CoS that are ± 1.2 nm from nominal.  

    3. HOT characteristics specified at 65 °C.


    Available free-space package add-ons

    1.2.png

     

    Laser specifications

    Parameters

    unit

    Minimum

    Typical values

    Maximum

    Storage temperature

    °C

    0

    -

    70

    Shell operating temperature

    °C

    5

    -

    70

    Laser chip operating temperature ¹

    °C

    5

    -

    45

    Laser series resistance

    Ω

    -

    2

    -

    Forward voltage of the laser at LIV current

    V

    -

    2

    -

    Nominal laser line width at LIV current

    kHz

    -

    500

    -

    Beam divergence angle at half-height and full width (θ|| × θ⊥)

    º

    -

    6 x 28

    8 x 32

    Edge-mode rejection ratio (SMSR)

    dB

    -

    -40

    -

    Polarization extinction ratio

    dB

    -17

    -20

    -

    Polarized state of the laser

    TE

    Pattern structure

    Basic mode

    Temperature tuning rate

    nm/°C

    -

    0.06

    -

    Current tuning rate

    nm/mA

    -

    0.002

    -

    Laser reverse voltage

    V

    -

    -

    0

    1. Operation below dew point not recommended without hermetically sealed package

     

    Free-space Package adds-on

    Parameters

    unit

    Minimum

    Typical values

    Maximum

    Photodiode forward current

    mA

    -

    -

    10

    Photodiode reverse voltage

    V

    -

    -

    50

    TEC Current (TOSA)

    A

    -1.1

    -

    1.1

    TEC Voltage (TOSA)

    V

    -3.0

    -

    3.0

    TEC current TO-8

    A

    -1.8

    -

    1.8

    TEC voltage TO-8

    V

    -2.2

    -

    2.2

    Thermistors

    -

    10

    -

     

    Handling Precautions

    These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.


    Optional Configurations

    --

    Downloads

    Request for Quotation

    We will reply to all your information about the product in time.

  • Product title: 852.347 nm DBR Laser Diode
  • Product link: https://www.idealphotonics.com/product/detail/1307.html
    • *Your name:

    • *Phone number:

    • *Your company name:

    • *Email:

    • *Purchase Quantity:

    • *Part Number:

    • Other Requirements:

    • 10+ 10 Years of Experience
    • 50 50 + Countries Bussiness
    • 10000 10k + Diodes sold worldwide
    • 30 30+ Invention patent
    • 10 10+ Advanced Optical Solutions