850nm 1mW TO46 SM VCSEL Laser Diode(with TEC)

Featuring optimized optical properties, the 850 nm single-mode VCSEL is an ideal selection for high-demand sensing system applications. Its innovative chip design suppresses high-order longitudinal and transverse modes while delivering stable linear polarization performance.

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 5)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 4)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 3)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 2)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.13mW GaAs SM Low-Power VCSEL Die(Group 1)

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a type of semiconductor laser whose laser beam emits perpendicularly from the top surface.Developed based on Gallium Arsenide (GaAs) semiconductor material, it is distinct from LEDs (Light-Emitting Diodes) and LDs (Laser Diodes). Its structure consists of mirror layers, an active region, and metal contact layers. The two emission mirrors are P-type and N-type Distributed Bragg Reflectors (DBR). The active region is composed of quantum wells. An ohmic contact is formed by depositing a metal contact layer on the surface of the P-type DBR, with a circular emission aperture fabricated on the P-type DBR for laser output.Die parameters: 2222; 795 nm; Single-mode; 1 M; S5, S6, S7; 0.13 mW; chip size 0.16×0.20 mm

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795nm 0.1mW TO46 VCSEL Laser Diode with TEC

The 795 nm TEC-cooled TO-packaged VCSEL is a vertically-emitting single-mode gallium arsenide laser diode grown via MOVPE process. Adopting TO package with built-in Thermoelectric Cooler (TEC), it realizes precise wavelength tuning through both laser drive current adjustment and temperature control, and is specially designed for TDLAS applications.

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763nm 1mW TO8 SM VCSEL laser diode

Single-mode VCSEL lasers feature high optical output power, narrow linewidth and excellent consistency, which are highly favored by domestic research customers.Our available in-stock wavelengths include 760 nm and 764 nm. Among them, the 760 nm laser is applied for TDLAS oxygen detection; the 795 nm model is for Rb atomic clock experiments; and the 852 nm model is for Cs atomic cooling.

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760nm 1mW TO5 SM VCSEL laser diode

Single-mode VCSEL lasers feature high optical output power, narrow linewidth and excellent consistency, which are highly favored by domestic research customers.Our available in-stock wavelengths include 760 nm and 764 nm. Among them, the 760 nm laser is applied for TDLAS oxygen detection; the 795 nm model is for Rb atomic clock experiments; and the 852 nm model is for Cs atomic cooling.

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794.7nm 0.5mW SM VCSEL laser diode with TEC

The 794.7 nm vertical-cavity surface-emitting laser is a vertically light-emitting GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process, with TO5 package.It achieves wavelength tuning by adjusting laser drive current and operating temperature. Integrated with built-in Thermoelectric Cooler (TEC) and monitoring Photodetector (PD), this laser is specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications. Featuring ultra-narrow linewidth and wide tuning range enabled by TEC temperature control, it is a cost-effective option for rubidium atomic spectrum D1 transition research.

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763nm 0.5mW SM VCSEL laser diode without TEC

The 763 nm vertical-cavity surface-emitting laser (VCSEL) is a vertically light-emitting laser fabricated from GaAsP/AlGaAs single-mode semiconductor laser chip grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process.Packaged in TO46 housing, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD). Specially designed for Tunable Diode Laser Absorption Spectroscopy (TDLAS) applications, its narrow linewidth characteristic makes it an ideal choice for oxygen analyzers without TEC, combining excellent performance and low cost, suitable for the manufacturing of analytical instruments related to oxygen detection.

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763nm 0.5mW SM VCSEL laser diode with TEC

The 763 nm vertical-cavity surface-emitting laser is a GaAsP/AlGaAs single-mode semiconductor laser grown via Metal-Organic Vapor Phase Epitaxy (MOVPE) process. Adopting TO39 metal hermetic package, it realizes wavelength tuning by adjusting laser drive current and operating temperature. The package integrates a built-in Thermoelectric Cooler (TEC) and a monitoring Photodetector (PD).

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