1064nm DBR Laser Diode

The 1064 nm DBR series high-performance edge-emitting laser diodes adopt advanced monolithic single-frequency GaAs laser technology. This series emits single spatial mode beam and adopts facet passivation process to guarantee reliability. The 1064 nm DBR devices act as low-noise pump sources and are widely used in frequency doubling applications.

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1039nm DBR Laser Diode

The 1039 nm DBR series high-performance edge-emitting laser diodes adopt advanced monolithic single-frequency GaAs laser technology. This series outputs single spatial mode beam and employs facet passivation technology to ensure long-term reliability. 1039 nm DBR laser diodes can serve as a low-noise nitrogen-vacancy (NV) center probe after frequency doubling.

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1036nm DBR Laser Diode

The 1036 nm DBR series high-performance edge-emitting laser diodes adopt advanced monolithic single-frequency GaAs laser technology. This series outputs single spatial mode beam and employs facet passivation technology to ensure long-term reliability. 1036 nm DBR laser diodes act as low-noise optical pump sources for frequency doubling applications.

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976nm DBR Laser Diode

The 976nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. It provides a single spatial mode beam with passivated facets for enhanced reliability. The 976nm DBR devices are used in optical coherence tomography (OCT) and other biomedical imaging and sensing applications.

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935nm DBR Laser Diode

The 935nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. It provides a single spatial mode beam with passivated facets for enhanced reliability. The 935nm DBR devices are used in optical coherence tomography (OCT) and other biomedical imaging and sensing applications.

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920nm DBR Laser Diode

The 920nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. It provides a single spatial mode beam with passivated facets for enhanced reliability. The 920nm DBR devices are used in optical coherence tomography (OCT) and other biomedical imaging and sensing applications.

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894.592nm DBR Laser Diode

The 894.592nm DBR series high-performance edge-emitting laser diodes are fabricated based on advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. This series of lasers delivers a single transverse mode beam output and adopts facet passivation technology to ensure reliability. The 894.592nm DBR devices are dedicated to cesium (Cs)-based atomic spectroscopy applications. The series is spectrally certified to guarantee accurate tuning to the cesium D1 transition line within an ambient temperature range of ±10°C around room temperature.

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866.214nm DBR Laser Diode

The 866.214nm DBR series high-performance edge-emitting laser diodes are based on advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. These lasers provide single spatial mode beam output and employ facet passivation technology to ensure reliability. The 866.214nm DBR series devices are widely used in calcium ion-based atomic spectroscopy applications. The 866.214nm DBR series is spectroscopically certified to precisely cover the calcium ion cooling transition frequency within an ambient temperature range of ±10°C around room temperature.

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854.209nm DBR Laser Diode

The 854.209 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of laser diodes outputs single spatial mode laser beams, with passivated facet design to ensure device reliability. The 854.209 nm DBR device is applicable to atomic spectroscopy fields under Calcium (Ca)-based application scenarios. In addition, this series of devices has passed spectral certification, which can accurately match the frequency doubling of calcium atom cooling transition within the ambient range of room temperature ±10 °C.

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852.347 nm DBR Laser Diode

The 852.347 nm DBR series high-performance edge-emitting laser diodes adopt advanced monolithic integrated single-frequency GaAs laser technology. This laser series delivers single transverse mode beam output and features facet passivation process for high reliability. The 852.347 nm DBR devices are suitable for cesium (Cs)-based atomic spectroscopy and Raman spectroscopy applications. Spectral certification ensures accurate tuning to the cesium atomic D2 transition line within ±10 °C around room temperature.

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845.584 nm DBR Laser Diode

The 845.584 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of laser diodes outputs single spatial mode laser beams, with passivated facet design to ensure device reliability. The 845.584 nm DBR device is applicable to atomic spectroscopy fields based on Calcium (Ca) related application scenarios. In addition, this series of devices has passed spectral certification, which can accurately match the frequency doubling of calcium atom cooling transition within the ambient range of room temperature ±10 °C.

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830 nm DBR Laser Diode

The 830 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of laser diodes outputs single spatial mode laser beams, with passivated facet design to guarantee device reliability. The 830 nm DBR device can serve as a low-noise pumping source, and is widely applied in biomedical diagnosis and imaging fields.

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