Parameter ¹

  Low power

 High power

Nominal wavelength (nm)²

1064 ± 0.6

Power range (mW)

40–180

100–350

Maximum Operating Current (CW & Pulsed) (mA)

250

550

Optical power at maximum operating current (mW)

180

350

Nominal Slope Efficiency (W/A)

0.75

0.8

Nominal threshold current (mA)

30

50

Storage temperature

°C

0

-

70

Shell operating temperature

°C

5

-

70

Laser chip operating temperature ¹

°C

5

-

45

Laser series resistance

Ω

-

2

-

Forward voltage of the laser at LIV current

V

-

2

-

Nominal laser line width at LIV current

kHz

-

500

-

Beam divergence angle at half-height and full width (θ|| × θ⊥）

º

-

6 x 28

8 x 32

Edge-mode rejection ratio (SMSR)

dB

-

-40

-

Polarization extinction ratio

dB

-17

-20

-

Polarized state of the laser

TE

Pattern structure

Fundamental mode

Temperature tuning rate

nm/°C

-

0.06

-

Current tuning rate

nm/mA

-

0.002

-

Laser reverse voltage

V

-

-

0

Photodiode forward current

mA

-

-

10

Photodiode reverse voltage

V

-

-

50

TEC Current (TOSA)

A

-1.1

-

1.1

TEC Voltage (TOSA)

V

-3.0

-

3.0

TEC current TO-8

A

-1.8

-

1.8

TEC voltage TO-8

V

-2.2

-

2.2

Thermistors

kΩ

-

10

-