828 nm DBR Laser Diode

The 828 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of laser diodes outputs single spatial mode laser beams, with passivated facet design to ensure device reliability. The 828 nm DBR device is applicable to LiDAR (Light Detection and Ranging) and water vapor detection fields.

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823 nm DBR Laser Diode

The 823 nm DBR series high-performance edge-emitting laser diodes adopt the advanced monolithic single-frequency GaAs laser technology. This laser series delivers single spatial mode beam output and applies end-face passivation technology for enhanced reliability. The 823 nm DBR series devices serve as low-noise pump sources for biomedical diagnosis and imaging applications.

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816nm DBR Laser Diode

The 816 nm DBR series high-performance edge-emitting laser diodes adopt the advanced monolithic single-frequency GaAs laser technology. This laser series delivers single spatial mode beam output and applies end-face passivation technology for enhanced reliability. The 816 nm DBR series devices serve as low-noise pump sources for biomedical diagnosis and imaging applications.

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810 nm DBR Laser Diode

The 810 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is fabricated based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of diodes outputs single spatial mode laser beams, with passivated facet design to guarantee operational reliability. The 810 nm DBR device can serve as a low-noise pumping source, and is applicable to biomedical diagnosis and imaging fields.

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808 nm DBR Laser Diode

The 808 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is fabricated based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of diodes outputs single spatial mode laser beams, with passivated facet design to guarantee operational reliability. The 808 nm DBR device can serve as a low-noise pumping source, and is applicable to biomedical diagnosis and imaging fields.

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800nm DBR Laser Diode

The 800 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is fabricated based on advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of diodes outputs single spatial mode laser beams, with passivated facet design to guarantee operational reliability. The 800 nm DBR device can serve as a low-noise pumping source, and is applicable to biomedical diagnosis and imaging fields.

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794.978 nm DBR Laser Diode

The 794.978 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode is fabricated based on monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of diodes outputs single spatial mode laser beams, with passivated cavity facet design to guarantee device reliability. The 794.978 nm DBR device is applied for rubidium (Rb) atomic spectral analysis and quantum sensing fields. It has passed spectral certification, which can precisely match the D1 transition spectral line of rubidium within the temperature range of room temperature ±10 °C.

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785nm DBR Laser Diode

The 785 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode adopts advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of devices outputs single spatial mode laser beams, with passivated facet design for superior operational reliability. Specially designed for rubidium (Rb) atomic spectroscopy applications, the laser has passed spectral certification, which can stably and precisely cover the D2 transition spectral line of rubidium within a temperature range of room temperature ±10 °C.

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780.241 nm DBR Laser Diode

The 780.241 nm Distributed Bragg Reflector (DBR) high-performance edge-emitting laser diode adopts advanced monolithic integrated single-frequency Gallium Arsenide (GaAs) laser technology.This series of devices outputs single spatial mode laser beams, with passivated facet design for superior operational reliability. Specially designed for rubidium (Rb) atomic spectroscopy applications, the laser has passed spectral certification, which can stably and precisely cover the D2 transition spectral line of rubidium within a temperature range of room temperature ±10 °C.

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778.105nm DBR Laser Diode

The 778.105 nm DBR series high-performance edge-emitting laser diodes adopt the company’s advanced monolithic single-frequency GaAs laser technology. This laser series delivers single spatial mode beam output and applies end-face passivation technology for enhanced reliability. The 778.105 nm DBR series devices serve as low-noise pump sources for biomedical diagnosis and imaging applications.

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776.061 nm DBR Laser Diode

The 776.061 nm DBR series high-performance edge-emitting laser diodes adopt the company’s advanced monolithic single-frequency GaAs laser technology. This laser series delivers single spatial mode beam output and applies end-face passivation technology for enhanced reliability. The 776.061 nm DBR series devices serve as low-noise pump sources for biomedical diagnosis and imaging applications.

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770.108nm DBR Laser Diode

The 770.108 nm DBR series high-performance edge-emitting laser diodes are developed with advanced monolithic single-frequency gallium arsenide (GaAs) laser technology. This laser series provides single spatial mode beam output and adopts facet passivation technology to ensure long-term reliability.770.108 nm DBR devices are widely applied in potassium-based atomic spectroscopy. Spectroscopic certification guarantees precise coverage of the potassium D1 transition line within a temperature range of ±10 °C relative to room temperature.

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