InAsSb 4-Stage TEC-Cooled Photovoltaic Infrared Detector

InAsSb 4-Stage TEC-Cooled Photovoltaic Infrared Detector

The MP-MIR-10.6-0.8 is a high-performance mid-to-far infrared photovoltaic detector manufactured using InAsSb (indium arsenide antimonide) III-V semiconductor material.The detector employs 4-stage thermoelectric cooling (4-stage TEC) and optical immersion technologies, delivering excellent detection performance without the need for liquid nitrogen cooling. It covers a broad spectral range from 2.0 to 15.2 μm and features high-speed response, high stability, and high sensitivity. The product is particularly suitable for FTIR spectroscopy, industrial gas analysis, toxic gas monitoring, and infrared analytical instrumentation.

Product features：Spectral coverage: 2.0 – 15.2 μm；InAsSb III‑V environmentally friendly material；4‑stage TEC cooling；Optical immersion technology；Nanosecond‑level high‑speed response；Long‑term stable operation

Part Number：MP-MIR-10.6-0.8

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Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Peak wavelength Time constant

10.6μm 0.8ns

Dimension Drawing

General Parameters

Detector Configuration

Item	Specification
Detector type	Photovoltaic
Active element material	Epitaxial InAsSb superlattice heterostructure
Cooling	4-stage thermoelectric cooling (4TE), chip temperature approx. 200 K
Temperature sensor	Thermistor
Optical area A₀	1 mm × 1 mm
Optical immersion	Hyperhemisphere
Package	4TE-T08
Acceptance angle φ	~36°
Window	wZnSeAR (3° wedged zinc selenide, anti‑reflection coated)

Test conditions: Ambient temperature T_amb = 293 K, chip temperature T_chip = 200 K, bias voltage V_b = 0 V.

Parameter	Symbol	Min.	Typ.	Max.	Unit
Cut‑on wavelength (10%)	λ_cut-on	—	2.0	—	μm
Peak wavelength	λ_peak	—	10.6	—	μm
Cut‑off wavelength (10%)	λ_cut-off	—	15.2	—	μm
Peak detectivity @ 20 kHz	D*	6.0×10⁸	1.1×10⁹	—	cm·Hz¹ᐟ²/W
Peak current responsivity	Ri	0.052	0.075	—	A/W
Time constant	τ	—	0.8	1.4	ns
Dynamic resistance	Rd	125	250	—	Ω

Absolute Maximum Ratings

Parameter	Conditions/Notes	Rating	Unit
Ambient operating temperature	Operation above 30 °C may increase active element temperature and reduce detector performance below specified parameters	–40 to 70	°C
Storage temperature	—	-40～85	°C
Soldering temperature	Duration ≤ 5 s	≤370	°C
Storage humidity	No condensation allowed	10～90	%
Maximum incident optical power density	CW or single pulse with pulse width > 1 μs	2.5	W/cm²
Maximum incident optical power density	Single pulses < 1 μs duration	10	MW/cm²
Maximum bias voltage	Vb max	-1.5	V
Maximum TEC voltage	4-stage TEC	8.3	V
Maximum TEC current	4-stage TEC	0.4	A

Spectral Response Characteristic Curve

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Optional Configurations

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Product title: InAsSb 4-Stage TEC-Cooled Photovoltaic Infrared Detector

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