InAsSb 1-Stage Thermoelectrically Cooled Photovoltaic Multi-Junction Infrared Detector

InAsSb 1-Stage Thermoelectrically Cooled Photovoltaic Multi-Junction Infrared Detector

The MP-MIR-4-20 is a mid-wave infrared photovoltaic multi-junction detector based on an InAsSb heterostructure. It integrates a 1-stage thermoelectric cooler, a thermistor temperature sensor, and a planar silicon anti-reflection coated window. At an ambient temperature of 293 K, the integrated 1-stage TEC cools the chip to a typical operating temperature of approximately 253 K, thereby improving peak detectivity, dynamic resistance, and overall signal-to-noise performance. The device features a back-side illuminated structure with an active area of 1 mm × 1 mm, making it suitable for gas analysis, non-contact temperature measurement, flame detection, and industrial infrared monitoring applications.

Product features：Spectral range: 2.0 to 5.5 μm；Large active area；1‑stage thermoelectric cooling；RoHS‑compliant III‑V material；Back‑side illuminated；Long‑term stability

Part Number：MP-MIR-4-20

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Main parameters
General Parameters
Optional Configurations
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Main parameters

Core parameters

Peak wavelength Time constant

4μm 20/30ns

Dimension Drawing

General Parameters

Detector Configuration

Item	Specification
Detector type	Photovoltaic, multi-junction
Photosensitive material	Epitaxial InAsSb heterostructure
Cooling method	1-stage thermoelectric cooler (1TE)
Typical chip temperature	Approx. 253 K
Temperature sensor	Thermistor
Active area	1 mm × 1 mm
Illumination type	Back-side illuminated
Optical immersion	None
Package	1TE‑TO39
Number of pins	8
Typical acceptance angle	Approx. 70°
Window material	Planar silicon
Window coating	Anti-reflection coated (pSiAR)

Opto-Electrical Performance (TEC-cooled operating condition, Tchip ≈ 253 K)

Parameter	Symbol	Min.	Typ.	Max.	Unit
Cut‑on wavelength (10%)	λ_cut-on	—	2.0	—	μm
Peak wavelength	λ_peak	—	4.0	—	μm
Cut‑off wavelength (10%)	λ_cut-off	—	5.5	—	μm
Peak detectivity @ 20 kHz	D*	3.0 × 10⁹	1.0 × 10¹⁰	—	cm·Hz¹ᐟ²/W
Peak current responsivity	Ri	0.08	0.18	—	A/W
Time constant	τ	—	20	80	ns
Dynamic resistance	Rd	1	4	—	kΩ

Opto-Electrical Performance (Uncooled reference condition, Tchip ≈ 293 K)

Parameter	Symbol	Min.	Typ.	Max.	Unit
Cut‑on wavelength (10%)	λ_cut-on	—	2.0	—	μm
Peak wavelength	λ_peak	—	4.0	—	μm
Cut‑off wavelength (10%)	λ_cut-off	—	5.9	—	μm
Peak detectivity @ 20 kHz	D*	1.0 × 10⁹	3.0 × 10⁹	—	cm·Hz¹ᐟ²/W
Peak current responsivity	Ri	0.06	0.16	—	A/W
Time constant	τ	—	30	160	ns
Dynamic resistance	Rd	0.15	0.45	—	kΩ

Test Conditions:

Ambient temperature: Tamb = 293 K

Bias voltage: Vb = 0 V

Unless otherwise noted, values are typical.

Absolute Maximum Ratings

Parameter	Conditions/Notes	Rating	Unit
Operating ambient temperature	Chip temperature may rise and performance may degrade above 30 °C ambient	-20～70	°C
Storage temperature	—	-20～85	°C
Soldering temperature	Duration ≤ 5 s	≤370	°C
Storage humidity	No condensation allowed	10～90	%
Maximum incident optical power density	CW or single pulse with pulse width > 1 μs	100	W/cm²
Maximum incident optical power density	Single pulse with pulse width < 1 μs	1	MW/cm²
Maximum bias voltage	Vb max	-2.0	V
Maximum TEC voltage	1-stage TEC	0.4	V
Maximum TEC current	1-stage TEC	1.67	A

Recommended Operating Conditions

Item	Recommended Setting
Ambient temperature	Approx. 20 °C (close to 293 K)
Detector bias	0 V, zero-bias operation
Chip operating temperature	Approx. 253 K
TEC drive method	Constant current or closed‑loop temperature control
Temperature feedback	Use built-in thermistor
Signal readout	Low-noise transimpedance amplifier
Recommended modulation frequency	Depends on light source, preamplifier, and SNR requirements; rated detectivity measured at 20 kHz
Optical protection	Avoid incident optical power exceeding rated limits
Operating environment	Avoid condensation, contamination, and strong mechanical shock

Spectral Response Characteristic Curve

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Optional Configurations

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Product title: InAsSb 1-Stage Thermoelectrically Cooled Photovoltaic Multi-Junction Infrared Detector

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