Central wavelength

λ

851.5

852

852.5

nm

Side mode suppression ratio

SMSR

30

40

dB

Threshold current

I_th

20

30

mA

Operating current

I_op

120

150

mA

Operating temperature

T_op

20

25

30

℃

Output power

P_f

10

30

50

mW

Quantum efficiency

η

0.08

0.12

mW/mA

Current tuning coefficient

∆ λ/∆I

0.015

nm/mA

Temperature tuning coefficient

∆ λ/∆T

0.12

nm/K

Forward voltage

V_f

1.3

2

V

Thermistor

R_T

9.5

10

10.5

KΩ

Thermistor temperature coefficient

-4.4

%/°C

Connector

FC/APC

Case temperature

℃

-5

25

70

Chip temperature

℃

+10

25

40

Operating current

mA

0

150

200

Forward voltage

V

0.8

1.2

2.0

TEC current

V

-

-

3.0

TEC voltage

A

-

-

4.0

Reverse voltage (LD)

V

-

-

2.0

Reverse voltage (PD)

V

-

-

20

2

Thermistor

9

N/C

3

PD Monitor Anode (-)

10

Laser Anode (+)

4

PD Monitor Cathode (+)

11

Laser Cathode (-)

5

Thermistor

12

N/C

6

N/C

13

Case Ground

7

N/C

14

Thermoelectric Cooler (-)