Half-wave voltage DC electrode

V

6.5

7.0

Electro-optical bandwidth S21@-3dB

GHz

3

RF half-wave voltage @DC

V

3.5

4.0

Bias half-wave voltage

V

5.0

Jitter

dB

0.5

1

Electrical return loss S110-20GHz

dB

-12

-10

RF connector input resistance

Ω

40

Input impedance DC connector

Ω

>1M

Crystal: Lithium Niobate

X-cut Y-propagation

Waveguide process

APE Process

Insertion loss

dB

3.0

4.0

Optical return loss

dB

<-45

Wavelength-dependent loss (1480-1600nm)

dB

0.5

1.0

DC extinction ratio

dB

20

22

Input fiber

Panda polarization-maintaining fiber 1.5 meters long, 900um

Output fiber

SMF-28 single-mode fiber 1.5 meters long, 900um (PMF optional)

Input RF connector

SMA

DC connector

Pin feed-through diameter: 1.0mm

Package size

mm

110 x12.5 x9.0

Operating temperature

℃

0~ +70

Storage temperature

℃

-40 ~ +85

DC input maximum voltage

V

±20

Maximum RF input power

dBm

+28

Maximum input optical power

mW

200 (APE process)