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1064nm 250mW TO9 DBR Laser Diode
A DBR laser consists of a gain section and a separate DBR grating. The waveguide on the laser diode provides wavelength-specific optical feedback and also acts partially as the gain medium. As single-frequency semiconductor lasers, DBR diodes, together with DFB laser diodes, deliver extremely narrow spectral linewidth below 5 MHz with typical SMSR over 40 dB.Innolume GaAs-based DFB and DBR lasers adopt InGaAs quantum well or InAs/GaAs quantum dot active regions with proprietary chip designs, covering the spectral range of 970–1330 nm.
Product features:High power output; DBR single longitudinal mode; superior wavelength stability; 9 mm TO-can package; low-noise design
Part Number:MP-DBR-1064-250-TO9-PM
Application area:Optical fiber communication | Gas sensing | LiDAR | Scientific research | Quantum technology
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Center Wavelength
1064nm

Model Parameters
Detailed parameters
Test Conditions: CW operation, Tchip = 25 °C, module mounted on a heat sink at room temperature.
Parameter | Symb. | Min. | Typ. | Max. | Unit |
Output Power | Pout | 250 | — | — | mW |
Peak Wavelength @ Pout | λP | 1062 | 1064 | 1066 | nm |
Spectral Width @ Pout ¹ | Δλ | — | <3 | 5 | MHz |
Wavelength Temperature Coefficient | Δλ/ΔT | — | 90 | 120 | pm/°C |
Wavelength Current Coefficient | Δλ/ΔI | — | 2 | 5 | pm/mA |
Side Mode Suppression Ratio @ Pout | SMSR | 35 | 40 | — | dB |
Threshold Current | Ith | — | 35 | 50 | mA |
Operating Current @ Pout | Iop | — | 300 | 400 | mA |
Forward Voltage @ Pout | Vf | — | 1.7 | 1.9 | V |
Polarization Extinction Ratio | PER | 15 | 20 | — | dB |
Divergence Angle Perpendicular to PN Junction (FWHM) | θ⟂ | 25 | 30 | 38 | deg. |
Divergence Angle Parallel to PN Junction (FWHM) | θ∥ | 4 | 6 | 9 | deg. |
¹ Extracted from self-heterodyne response with a 9 km delay line.
Absolute Maximum Ratings
Parameter | Min. | Max. | Unit |
Laser Diode Reverse Voltage | — | 1 | V |
Laser Diode CW Forward Current | — | 500 | mA |
Storage Temperature (Original Sealed Package) | -40 | 80 | °C |
Lead Soldering Temperature (Max. 5 s) | — | 250 | °C |
Operating Temperature Range | 15 | 50 | °C |
Characteristic CurvesTypical performance for reference only (Test conditions: continuous operation, module mounted on a heat sink at room temperature)
Optical-current-voltage characteristics / Output spectrum at operating current (10 pm resolution) / Fast-axis far-field pattern at operating current / Slow-axis far-field pattern at 25 ℃ under operating current

Wavelength versus current and temperature curve
NoticeThe laser emitted by this device is invisible and potentially hazardous to human eyes. Avoid direct viewing of fiber output or looking into the collimated beam along the optical axis during operation. Appropriate laser safety goggles must be worn at all times.
Absolute maximum ratings shall only be applied to the device for a short duration. Long-term operation at or beyond maximum ratings may cause permanent damage and degrade long-term reliability.
Operation outside the specified maximum ratings will result in device failure and potential safety hazards. A dedicated matched power supply must be used to ensure the peak optical power does not exceed the limit. The device requires a qualified heat sink with sufficient heat dissipation and thermal conductivity.
This is an open-heatsink laser diode. It shall only be operated in a cleanroom environment or dustproof enclosure. Operating temperature and relative humidity must be controlled to prevent condensation on the laser facet. Any contamination or physical contact with the laser facet must be strictly avoided.
ESD ProtectionElectrostatic discharge is a primary cause of unexpected device failure. Strict ESD precautions are mandatory. Wear an anti-static wrist strap, use grounded work surfaces, and follow standardized anti-static operating procedures during handling.
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