Parameter

200-1100nm

400-1000nm

320-1100nm

320-1000nm

Active area

Φ1.0mm

Φ150um

1.1mm×1.1mm

Φ0.8mm

Bandwidth Range

DC ～150MHz

DC～380MHz

DC～20MHz

DC～50MHz

Gain Range

Hi-Z Load: 1 × 10⁴ V/A; 50Ω Load: 5 × 10³ V/A

Hi-Z Load: 5 × 10⁴ V/A; 50Ω Load: 2.5 × 10⁴ V/A

1 × 10¹² V/A ± 10%

Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A

Signal Amplitude

Hi-Z Load: 0～10V; 50Ω Load: 0～5V

Hi-Z Load: 0～10V; 50Ω Load: 0～5V

0 ～10V

Hi-Z Load: 0～3.6V; 50Ω Load: 0～1.8V

NEP

2.92× 10^-11W/Hz^1/2

3.6 × 10^-11W/Hz^1/2

3.0 × 10^-15W/H z^1/2

7.8 × 10^-12W/Hz^1/2

Photodetector Depth

0.09"  (2.2  mm)

0.20"  (5.0  mm)

0.10"  (2.4  mm)

0.07"  (1.8  mm)

Operating Temperature

10-50℃

10-40℃

10-50℃

Storage Temperature

-25-70℃

Detector Weight

0.10kg

0.06kg

Dimensions

2.79" X  1.96" X 0.89"  (70.9  mm X 49.8     m

m X 22.5  mm)

2.79" X  1.96" X  0.89"  (70.9  mm X 49.9     mm

X 22.5  mm)

Power Interface

Power Supply

Power Switch

Signal Interface

Support Rod Interface

Optical Interface

LUMBERG  R SMV3  FEMA LE

LDS12B(DP), ±12V DC Steady voltage linear power supply, 6W, 220VAC

Sliding Switch with LED Indicator

BNC Female Connector

M4 X 2

SM1 X  1

SM0.5 X  1

Product Name

Material

Type

Feature

Wavelength Range Photodetector Size

Reserved Optional Configurations

Photodetector

Si (Silicon-Based)

Amplified

Fixed Gain

200-1100nm ，Φ1.0mm

400-1000nm ，Φ150u

m

320-1100nm ，1.1mmX1.1

mm

320-1000nm ，Φ0.8mm

MP-PD-M-S-150-AF2B10

200-1100nm Silicon-Based Amplified Photodetector, Active area Φ1.0mm, Fixed Gain 1 × 10⁴ V/A, Bandwidth Range DC ~ 150MHz

MP-PD-M-S-380-AF4F015

400-1000nm Silicon-Based Amplified Photodetector, Active area Φ150um, Fixed Gain 5 × 10⁴ V/A, Bandwidth Range DC ~ 380MHz

MP-PD-M-S-20-AF3D11

320-1100nm Silicon-Based Amplified Photodetector, Active area 1.1mm×1.1mm, Fixed Gain 1 × 10¹² V/A ± 10%, Bandwidth Range DC ~ 20MHz

MP-PD-M-S-50-AF3C8

320-1000nm Silicon-Based Amplified Photodetector, Active area Φ0.8mm, Fixed Gain 100kV/A, Bandwidth Range DC ~ 50MHz