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Home/ Products/ PhotoDetectors/ Biased detectors/ InGaAs Bias Photodetector/ 500-2600nm indium gallium arsenide biased photodetector - conventional type/ 800-1700nm Indium Gallium Arsenide Bias Photodetector, Active area Φ2.0mm, Rise Time 30ns

    • 800-1700nm Indium Gallium Arsenide Bias Photodetector, Active area Φ2.0mm, Rise Time 30ns

    IdealPhotonics' indium gallium arsenide (InGaAs) bias photodetector has a spectral sensitivity range from 500nm to 2600nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for general photodetection applications, offering excellent performance and high cost-effectiveness. The product provides comprehensive technical support and is commonly used in visible and infrared light measurements

    Product features：Sensitivity range covers 500nm to 2600nm, commonly used in visible and infrared light measurements、 Bias-type detector, with extremely low noise and fast response, no gain、 Low cost, suitable for general photodetection applications、 Excellent performance, high cost-effectiveness, and comprehensive technical support、 Customization services are available upon request

    Part Number：MP-CPD-M-I-B-C-8J20

    Application area：Visible and infrared light measurements

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    Main parameters
  • Core parameters

  • Wavelength Range Active Area Bandwidth

    800-1700nm Φ2.0mm 11.7MHz

  • Dimension Drawing
    • General Parameters

    Main Parameters

    Parameter

    Value

    Wavelength Range

    500-1700nm

    900-1700nm

    800-1700nm

    900-2600nm

    Active Area

    Φ1.0mm

    Φ1.0mm

    Φ2.0mm

    Φ0.5mm

    Φ1.0mm

    Bandwidth Range

    70MHz

    35MHz

    11.7MHz

    20.6MHz

    14MHz

    Rise Time (@50Ω)

    5ns

    10ns

    30ns

    17ns

    25ns

    NEP

    2.0 × 10-14W/H z1/2

    2.5 × 10-14W/H z1/2

    1.3 × 10-13W/H z1/2

    1.0 × 10-12W/H z1/2

    1.5 × 10-12W/Hz1/2

    Dark Current

    1.5nA(Typ.)/10

    nA(Max)

    1.0nA(Typ.)/25

    nA(Max)

    55nA(Typ.)/20 0nA(Max)

    2uA(Typ.)/20u

    A(Max)

    5uA(Typ.)/40uA(Max)

    Junction Capacitance

    50pF(Typ.)

    80pF(Typ.)

    100pF(Typ.)

    140pF(Typ.)

    500pF(Typ.)

    Bias Voltage

    5V

    1.8V

    Output Current

    0~5mA

    Output Voltage

    ~9V(Hi-Z)；

    ~170  mV(50Ω)

    Active Area Depth

    0.09"  (2.2  mm)

    Operating Temperature

    10-50℃

    Storage Temperature

    -20-70℃

    Detector Net Weight

    0.10kg

    Undervoltage Indicator

    Vout  ≤9V(Hi-Z) Vout  ≤170mV(50Ω)

    Dimensions

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.8     mm X  22.5  mm)

    Power Supply Battery

    Power Switch

    Signal Interface

    Battery Monitoring

    Support Rod Interface

    Optical Interface

    A23 ，12VDC，40mAh

    Slide Switch

    BNC Female Socket

    Instantaneous Button

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

    Response Curve：

    TZJYPEGW23W%$JP)FBZWKAS.png

    Product Configuration：

    图片1.png



    Attachment 1: Optional Configuration Table

    Silicon-based Biased Photodetector

    Optional Configuration

    Name

    Material

    Type

    Features

    Wavelength Range Light-Sensitive Size

    Reserved Optional Configurations

    CPD: "Photodetector"

    I: InGaAs (Indium Gallium Arsenide)

     Biased Type

    Conventional Type

    5I10：500-1700nm ，Φ1.0mm






    9N10：900-1700nm，Φ1.0mm






    8J20：800-1700nm ，Φ2.0mm






    9O5 ：900-2600nm ，Φ0.5mm






    9O10：900-2600nm，Φ1.0mm


     

    Attachment 2: Model and Product Number Correspondence Table

    Model

    Specs

    MP-CPD-M-I-B-C-5I10

    500-1700nm InGaAs biased photodetector, Active area Φ1.0mm, rise time 5ns, bandwidth 70MHz

    MP-CPD-M-I-B-C-9N10

    900-1700nm InGaAs biased photodetector, Active area  Φ1.0mm, rise time 10ns, bandwidth 35MHz

    MP-CPD-M-I-B-C-8J20

    800-1700nm InGaAs biased photodetector, Active area  Φ2.0mm, rise time 30ns, bandwidth 11.7MHz

    MP-CPD-M-I-B-C-9O5

    900-2600nm InGaAs biased photodetector,Active area  Φ0.5mm, rise time 17ns, bandwidth 20.6MHz

    MP-CPD-M-I-B-C-9O10

    900-2600nm InGaAs biased photodetector, Active area  Φ1.0mm, rise time 25ns, bandwidth 14MHz

     

    Optional Configurations

    --

    Downloads

    800-1700nm Indium Gallium Arsenide Bias Photodetector, Active area Φ2.0mm, Rise Time 30ns.pdf

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  • Product title: 800-1700nm Indium Gallium Arsenide Bias Photodetector, Active area Φ2.0mm, Rise Time 30ns
  • Product link: https://www.idealphotonics.com/product/detail/425.html

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    • 10000 10k + Diodes sold worldwide
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