1064nm Ultra-Narrow Linewidth Single-Frequency Laser Diode

1064nm Ultra-Narrow Linewidth Single-Frequency Laser Diode

The 1064 nm ultra-narrow linewidth single-frequency laser is a high-performance semiconductor laser thatintegrates silicon photonic chip technology, precise optical path design, and advanced packaging processes.

Product features：Narrow linewidth (10~20 kHz)；Single-frequency center wavelength~1064nm；Stable output power and wavelength；Low optical noise；Low RIN value；Low power consumption

Part Number：MP-UNL-1064-20-SA

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Main parameters
General Parameters
Optional Configurations
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Main parameters

Core parameters

Center Wavelength Output Power Linewidth

1064nm 20mW 20kHz

Dimension Drawing

General Parameters

Optical and electrical parameters (TLD=25℃)

Specifications	Symbol	Condition	Min.	Typ.	Max.	Unit
Threshold Current	Ith	CW		35		mA
Center Wavelength	λC			1064		nm
Output Optical Power	Pf	CW		20		mW
Lorentz Linewidth*	FWHM	CW			20	kHz
Relative Intensity Noise	RIN	≥1kHz		-135		dB/Hz
Side Mode Suppression Ratio	SMSR	CW		60		dB
Polarization Extinction Ratio	PER	CW	20			dB
Optical Isolation	ISO			50		dB
TEC Setpoint Temperature	TTEC	CW	15		45	℃
Operating Temperature	To		-20		60	℃
Operating Humidity	%		5		85	%

*Determination of Lorentz Linewidth by Time-Delay Self-Heterodyne Method

Absolute Maximum Ratings

During operation, the environmental conditions and parameter settings must not exceed the following absolute maximum values; otherwise, it may result in degraded performance, reduced product lifetime, or permanent device damage. Any product issues arising from such conditions are not covered under warranty.

Specifications	Symbol	Condition	Min.	Typ.	Max.	Unit
Storage Temperature	TS		-40		85	℃
LD Forward Voltage	VLD			1.6	1.8	V
LD Forward Current	ILD				300	mA
TEC Current	ITEC				1.5	A
TEC Voltage	VTEC				3	V